Semiconductor Contact Structure Layout for Reliable High Integration
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Solution Overview
Problem
The integration of semiconductor devices leads to a reduction in electrical properties and production yield, necessitating improvements in reliability and electrical performance.
Innovation Solution
The implementation of a semiconductor device design featuring conductive patterns, memory channel structures, connection contact structures, and parity contact structures with specific dielectric layers to enhance electrical connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If integration of semiconductor devices is increased, then device functionality and compactness are improved, but electrical properties and production yield deteriorate
Solution Approach 1:
The device is divided into distinct functional regions including a first region with a first conductivity type and a second region with a second conductivity type. This segmentation allows each region to be optimized independently for its specific function, maintaining electrical properties while achieving high integration and multi-functionality in the overall device structure.
2Volume of moving object
If integration of semiconductor devices is increased, then device compactness is improved, but production yield deteriorates
Solution Approach 1:
Different regions of the device are assigned different conductivity types and structural characteristics optimized for their specific functions. The first region has a first conductivity type optimized for one function while the second region has a second conductivity type optimized for another function, allowing each local area to perform its function efficiently within a compact overall structure.
3Speed
If operating speed is increased, then device performance is improved, but power consumption increases
Solution Approach 1:
The device separates high-speed operation functions in one region from low-power functions in another region. The first region with the first conductivity type handles high-speed operations while the second region with the second conductivity type handles functions requiring lower power consumption, achieving a balance between operating speed and power usage.
Data Source
AI summary
A semiconductor device comprising: a first conductive pattern; a second conductive pattern on the first conductive pattern; a connection contact structure and a parity contact structure in the second conductive pattern and are connected to the first conductive pattern; wherein the connection contact structure includes: a connection contact; and a connection contact dielectric layer extending around the connection contact, wherein the parity contact structure includes: a parity contact; and a parity contact dielectric layer extending around the parity contact, wherein the parity contact dielectric layer includes: a sidewall part in contact with an upper surface of the first conductive pattern and a sidewall of the second conductive pattern; and a connection part connected to the sidewall part, wherein a lower surface of the connection part of the parity contact dielectric layer is in contact with an upper surface of the second conductive pattern.