Semiconductor Contact Structure for Leakage-Safe Source/Drain Linking
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Solution Overview
Problem
As demand for high-performance, high-speed, and multifunctional semiconductor devices increases, there is a need for improved yield in semiconductor manufacturing, particularly in creating fine patterns and overcoming size reduction limitations of planar metal oxide semiconductor FETs, which traditional technologies have not adequately addressed.
Innovation Solution
A semiconductor device design featuring active regions with insulating structures and gate structures that intersect these regions, including a common contact plug electrically connected to opposing source/drain regions, with specific thickness and material properties for the insulating liners and gate spacers to prevent leakage current and improve manufacturing productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulating structures are added to prevent leakage current and improve yield, then device reliability improves, but device complexity increases
Solution Approach 1:
The insulating structure is segmented into multiple portions (first portion overlapping the gate structure, second portion not overlapping) to prevent leakage current between adjacent source/drain regions while maintaining manufacturing feasibility. This segmentation allows the structure to fulfill its isolation function without requiring complete coverage that would increase complexity excessively.
Solution Approach 2:
The insulating structure is positioned specifically in regions where leakage prevention is most critical (between adjacent source/drain regions and overlapping the gate structure), rather than uniformly across the entire device. This localized approach improves reliability where needed while minimizing unnecessary complexity in other regions.
2Manufacturing precision
If insulating structures with specific thickness variations are used to prevent recess defects, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The insulating structure has different thicknesses in different regions (thicker in the first portion overlapping the gate structure, thinner in the second portion), which prevents recess defects in critical areas while avoiding excessive material usage and complexity in non-critical areas.
Solution Approach 2:
The insulating structure is formed before gate structure formation, preliminarily establishing the thickness profile that will prevent recess defects during subsequent manufacturing steps. This preliminary action ensures proper thickness distribution without requiring complex post-processing adjustments.
3Productivity
If common contact plug is used to electrically connect opposing source/drain regions, then productivity improves, but manufacturing precision requirements increase
Solution Approach 1:
The common contact plug merges multiple electrical connections (to opposing source/drain regions) into a single structural element, improving productivity by reducing the number of separate connection steps while the insulating structure provides precise alignment guidance to maintain manufacturing precision.
Data Source
AI summary
A semiconductor device having active regions including a first active region and a second active region parallel to each other and respectively extending on a substrate in a first horizontal direction, a field region defining the active regions, a first insulating structure extending in the first horizontal direction on the field region, a gate structure extending, in a second horizontal direction, to intersect the active regions and the first insulating structure, source/drain regions disposed on at least one side of the gate structure, the source/drain regions including first source/drain regions on the first active region and second source/drain regions on the second active region, and a common contact plug on a first side of the gate structure and connected to the first and second source/drain regions opposing each other. The first insulating structure includes a first portion overlapping the gate structure in a vertical direction.