Semiconductor Contact Element Insulating Liner Structure

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

As semiconductor devices are scaled to smaller technology nodes, the decreasing separation between contact elements and semiconductor devices increases the risk of electrical shorts and leakage paths, making it challenging to ensure accurate contact formation without forming undesired contacts.

Innovation Solution

A contact element structure is developed with an insulating liner portion that covers the upper sidewall portion of an opening in an insulating material layer but not the lower sidewall portion, and a conductive material is positioned within the opening to cover the contact liner, reducing the risk of shorts between contact elements and semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If contact elements are placed closer together to increase device density, then productivity and device integration are improved, but the risk of electrical shorts and leakage paths between contact elements increases

Engineering Contradiction:
Improvedevice densityVSAvoidrisk of electrical shorts
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The contact element structure is segmented into multiple functional layers: an insulating material layer, an insulating liner portion, and a conductive material layer. This segmentation allows the insulating portion to act as a barrier between adjacent contact elements, enabling higher device density while preventing electrical shorts through the use of distinct functional zones within the contact structure

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulating liner portion serves as an intermediary layer between the insulating material layer and the conductive material. This intermediary insulating layer prevents direct electrical contact between adjacent conductive contact elements while still allowing the contact structure to function, thus enabling higher density without increasing short-circuit risk

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the separation between contact elements and semiconductor devices is reduced to increase integration, then device density is improved, but manufacturing precision requirements increase due to alignment sensitivity

Engineering Contradiction:
Improveintegration densityVSAvoidalignment accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The insulating liner portion is formed in advance within the contact element structure, creating a pre-defined insulating barrier. This preliminary formation of the insulating layer ensures that even when contact elements are placed close to semiconductor devices, the pre-established insulating barrier maintains proper electrical isolation without requiring extremely tight alignment control during subsequent processing steps

Inventive Principle:
Principle #10Preliminary action

3Length of moving object

If conventional contact structures are used at advanced technology nodes, then device scaling is achieved, but electrical shorts and leakage paths increase due to reduced separations

Engineering Contradiction:
Improvefeature sizeVSAvoidelectrical shorts and leakage paths
Core Design Contradiction:
Length of moving objectVSObject-affected harmful factors

Solution Approach 1:

The contact element structure implements local quality by having different regions with different electrical properties: the insulating material layer and insulating liner portion provide electrical isolation in regions where shorts are problematic, while the conductive material layer provides electrical connection where needed. This localized differentiation of material properties allows advanced scaling while preventing harmful electrical shorts through targeted insulation at critical interfaces

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10354918B2Contact element structure of a semiconductor device
Publication Date: 2019.07.16 GLOBALFOUNDRIES US INC
  • US10354918B2 patent drawing
  • US10354918B2 patent drawing
  • US10354918B2 patent drawing

AI summary

A contact element structure of a semiconductor device includes an opening positioned in an insulating material layer, the insulating material layer being positioned above a semiconductor substrate, and the opening having an upper sidewall portion, a lower sidewall portion, and a bottom surface portion. An insulating liner portion is positioned within the opening, the insulating liner portion covering the insulating material layer at the upper sidewall portion but not covering the insulating material layer at the lower sidewall portion. A contact liner is positioned within the opening and covers the insulating liner portion, the insulating material layer at the lower sidewall portion, and the insulating material layer at the bottom surface portion, and a conductive material is positioned in the opening and covers the contact liner.