Solid-State Devices TRIZ Cases

Single-sided wiring on the transparent substrate eliminates dual-layer complexity and reduces manufacturing costs for thin LED light sheets.

A flexible OLED panel uses internal pre-stress to maintain non-planar configurations without external fixtures.

A circuitized substrate acts as an electrical interconnection device and heat spreading lid for stacked semiconductor apparatuses.

Vertical LEDs connected in series via transparent electrodes distribute current across multiple devices.

Segmented organic molecules enable charge-transfer transitions, resolving the trade-off between internal quantum efficiency and long-term thermal stability.

A spin current magnetoresistance element uses asymmetric ferromagnetic layers to cancel magnetic fields and stabilize the reference layer.

Recess patterns and transfer gates in an image sensor structure separate light wavelengths through controlled impurity regions.

A quantum dot color conversion layer transforms blue OLED light into red, green, and blue wavelengths to stabilize display output.

A light detection device calculates the difference between readout signals from two switching units to determine irradiation status.

A resistive structure increases the turn-on voltage of a second sub-pixel, preventing color crosstalk during pure color display.

A quantum dot infrared photodetector uses a segmented barrier layer with varying aluminum concentrations to suppress impurity formation.

A quantum dot photoluminescence film converts white light into high-purity red and green emissions for organic light emitting diode displays.

Multi-density polysilicon doping prevents void migration in recessed gate electrodes, reducing leakage current and threshold voltage fluctuations.

A big via under the bonding pad prevents peeling and cracking in thin metal layers.

Super viabar structures bridge vertically mismatched pitches between semiconductor and metallization contacts, resolving fabrication precision challenges.

Neutral precursor polymers prevent ion migration in organic light-emitting diodes while maintaining high electron injection efficiency.

Local filler thickness reduction suppresses optical color mixture at boundaries while maintaining substrate spacing to prevent element damage.

Continuous phase-change material strips connected diagonally to bottom electrodes reduce patterning damage and electric interference in memory arrays.

Segmented photoresist ashing shrinks pattern width and thickness, reducing the distance between data lines and pixel electrodes to increase aperture ratio.

OLED plant lighting suppresses 520 to 580 nm intensity below 20 percent of total output to improve photosynthetic absorption while reducing heat generation.

Crosslinking organic host material enables stable inkjet printing of electron transport layers on display panels.

Staggered stacked metal lines with orthogonal projections positioned within first layer gaps to prevent electrical shorting during manufacturing.

Epitaxial sidewall growth creates high mobility fins on insulator, avoiding expensive EUV lithography and wafer bonding.

Removing a dummy gate stack to the buried insulator creates a dielectric isolation that preserves channel stress and reduces leakage.

Segmented protection elements create direct discharge paths that prevent electrostatic breakdown across different power supply system boundaries.

Gate patterns form isolation regions in GaN transistors, eliminating dedicated masks and reducing leakage current.

A semiconductor device integrates a diode and resistor within an isolation tank to provide bidirectional electrostatic discharge protection.

Vertical vibration modes in the cavity reduce total internal reflection, boosting light extraction efficiency without complex surface roughness.

A P on N semiconductor structure isolates photodiodes to prevent electron diffusion between adjacent pixels.

Oblique intersecting mark patterns enable simultaneous multi-directional coordinate detection for semiconductor wafer alignment.

Segmented shorting bars isolate capacitance in large display panels, reducing voltage drops and propagation delays during signal line repairs.

Segmenting data lines into offset base and line parts minimizes occupied area, enabling compact exposure heads.

A hybrid organic/nanoparticle device integrates silver nanoparticles with small-molecule semiconductors to achieve dual functionality.

Micro-concave structures and distributed pores in the substrate reduce total internal reflection to improve light extraction efficiency.

A photoelectric conversion element uses a fullerene derivative in the active layer to generate power from weak indoor illumination.

A curved OLED display embeds touch and fingerprint detection elements within a single layer structure to reduce device size.

Precharging unselected memory cell strings with elevated channel voltages prevents program disturbance in stacked layers, ensuring accurate data storage.

An insulated common electrode reduces overlap with drain lines, improving contrast and aperture ratio in liquid crystal displays.

A flexible OLED panel uses a thinned substrate region with ductile material to enable folding and extending capabilities.

A non-volatile memory device uses a first electrode layer with a smaller work function than the second electrode to reduce electric resistance at the interface.

A display substrate uses an ordered porous thin film to arrange quantum dots in pore passages between electrode layers.

Hydrogen-free perfluorocarbon etching gas patterns the hard mask layer, preventing polymer deposition on chamber walls.

A molecular interlayer with low surface charge sits between the quantum dot active layer and the electron transport layer.

A separation layer with a shrinking sidewall isolates the display area from substrate openings in narrow bezel designs.

A display panel uses vertically stacked emissive layers to reduce fine metal mask operations and simplify OLED fabrication.

Rib structures pattern source and drain electrodes to define organic semiconductor film boundaries during coating deposition.

Sol-gel composite dielectric reduces driving voltage and power consumption in organic thin film transistors.

A bi-directional split gate NAND flash memory structure uses shared control and select gates to reduce row line count.

A bridge pattern on a planarization layer connects auxiliary patterns in array substrates.

Replacing red phosphors with dedicated red LED dies on transparent substrates to improve quantum conversion efficiency and lower manufacturing costs.

Segmented bonding layers between glass substrates and polarizing plates reduce adhesive material usage while maintaining structural reliability.

A cell-type power decoupling capacitor stabilizes supply voltage using a stacked dielectric structure.

Cl2/O2 dry etch modifies semiconductive oxide layers, resolving inconsistent characteristics and low mobility in amorphous silicon displays.

Combining organic semiconductor molecules with plasticizers creates an interphase region that enhances charge carrier mobility while resolving brittleness.

Rotating roller deposition achieves less than 7% thickness uniformity in organic field effect transistors while preventing particle formation.

A magnetic tunnel junction structure uses a dielectric hard mask and etch stop layer to define the pinned layer before patterning the free layer.

A conductive layer shields the tunnel insulating layer during gate pattern etching and cleaning processes.

Through-mold first level interconnects conduct signals from a top semiconductor die to a substrate while bypassing a bottom die.

Self-aligned bottom electrode structure for phase change memory cells using a separation layer and etch masks.

Offset leads and bulging metal plate portions enable compact LED chip placement, resolving fixed spacing constraints in conventional designs.

Inverting electrodes to the substrate reduces optical absorption and improves luminous efficiency by freeing the light-emitting surface from coverage.

Nitrogen-containing compounds bond with alkali metals to prevent diffusion into p-type layers, reducing driving voltage and extending device lifetime.

Varying the capping layer thickness across pixel areas reduces color distortion when viewed from different angles while maintaining manufacturing simplicity.

A semiconductor contact element structure uses an insulating liner to cover upper sidewalls of openings in insulating material layers.

Segmenting substrate recesses with a barrier layer manages non-visible light absorption, reducing manufacturing complexity while maintaining quantum efficiency.

Coordinating image position shifts across light emitting display apparatuses minimizes image loss caused by individual deterioration compensation.

Dynamic current path adjustment controls rising slopes of unselected word line signals, preventing overshooting and electric field coupling.

Alumina blocking layers suppress lateral electron diffusion during thermal stress, preserving threshold voltage stability.

Complementary gate fill materials impart mechanical stress to tri-gate channels, boosting carrier mobility in CMOS devices.

Solution processing establishes stable carrier density to prevent unintentional doping effects that cause variable threshold voltage.

Thermosetting resin molding achieves a 0.2 mm periphery width, resolving fluidity limits that prevent thin structures in standard injection processes.

A display panel structure positions the common electrode layer away from the light emitting layer to eliminate light transmittance requirements.

Modified surface topography with periodic grooves and gradient refractive index material enhances light absorption in semiconductor image sensors.

Varying the charge generation layer thickness suppresses electrical color mixture, enhancing chromaticity precision and current efficiency.

A buried word line structure with a U-shape trench minimizes the short channel effect in DRAM devices.

Narrower insulated gate trenches in the boundary region distribute electric fields, reducing reverse overshoot current and preventing IGBT destruction.

A patterned sacrificial layer guides fine metal mask deposition for precise organic light-emitting display emission layers.

A semiconductor fabrication method uses mask material as a stopper to planarize gate electrode surfaces across distinct transistor regions.

L-shaped bottom electrode pillars reduce the interface area between the phase change material and the electrode to lower reset current consumption.

Cylindrical housing eliminates turbulence and wasted circuit board space while maintaining efficient airflow.

Through holes in the low-refractive-index film above amplifier circuits use air as a dielectric to reduce parasitic capacitance and improve signal levels.

Anisotropic conductive film connects exposed signal pad portions through insulation openings.

A dummy silicide block layer mask maintains stable breakdown voltage by keeping isolation regions non-silicided during processing.

Segmented cleaning units automate the process, eliminating manual handling errors that degrade wafer quality.

Forming gate electrodes before ion injection prevents mobile ions from reaching semiconductor channels, maintaining TFT reliability and simplifying fabrication.

A backside illuminated image sensor integrates a light blocking layer within trenches along pixel boundaries to absorb slanting light.

A 3D semiconductor memory device uses vertically stacked patterns and stepwise conductive lines to boost integration density.

A method fabricates hybrid tri-gate and dual-gate FinFETs on a silicon-on-insulator substrate using selective nitride caps for gate electrode patterning.

Replacing reactive metals with water-resistant organic compounds resolves the contradiction between electron injection efficiency and element stability.

A TADF host material sensitizes green phosphorescent guest emission in organic electroluminescent devices.

A pixel structure design removes exposed semiconductor periphery to eliminate parasitic capacitance between the transparent electrode and semiconductor layer.

An integrated circuit directional light sensor uses an overhanging light blocking structure to shade adjacent photodetectors for angle detection.

Low-amplitude clock signals reduce operating electric current while synchronized rise edges ensure reliable high-speed data transfer.

Stress control insulating layers offset mechanical forces in vertical memory stacks.

A substrate decouples thermal stress from phosphors in an optical cavity, maintaining quantum efficiency and color balance.

A stacked semiconductor device uses a base die input buffer and parallel circuit to sort write data bits before transmission through through-electrodes.

Recovery units restore serial link signals to prevent data loss from noise interference over extended distances.