Solid-State Devices TRIZ Cases

Single-sided wiring on the transparent substrate eliminates dual-layer complexity and reduces manufacturing costs for thin LED light sheets.

A flexible OLED panel uses internal pre-stress to maintain non-planar configurations without external fixtures.

A circuitized substrate acts as an electrical interconnection device and heat spreading lid for stacked semiconductor apparatuses.

Vertical LEDs connected in series via transparent electrodes distribute current across multiple devices.

Segmented organic molecules enable charge-transfer transitions, resolving the trade-off between internal quantum efficiency and long-term thermal stability.

A spin current magnetoresistance element uses asymmetric ferromagnetic layers to cancel magnetic fields and stabilize the reference layer.

Recess patterns and transfer gates in an image sensor structure separate light wavelengths through controlled impurity regions.

A quantum dot color conversion layer transforms blue OLED light into red, green, and blue wavelengths to stabilize display output.

A light detection device calculates the difference between readout signals from two switching units to determine irradiation status.

A resistive structure increases the turn-on voltage of a second sub-pixel, preventing color crosstalk during pure color display.

A quantum dot infrared photodetector uses a segmented barrier layer with varying aluminum concentrations to suppress impurity formation.

A quantum dot photoluminescence film converts white light into high-purity red and green emissions for organic light emitting diode displays.

Multi-density polysilicon doping prevents void migration in recessed gate electrodes, reducing leakage current and threshold voltage fluctuations.

A big via under the bonding pad prevents peeling and cracking in thin metal layers.

Super viabar structures bridge vertically mismatched pitches between semiconductor and metallization contacts, resolving fabrication precision challenges.

Neutral precursor polymers prevent ion migration in organic light-emitting diodes while maintaining high electron injection efficiency.

Local filler thickness reduction suppresses optical color mixture at boundaries while maintaining substrate spacing to prevent element damage.

Continuous phase-change material strips connected diagonally to bottom electrodes reduce patterning damage and electric interference in memory arrays.

Segmented photoresist ashing shrinks pattern width and thickness, reducing the distance between data lines and pixel electrodes to increase aperture ratio.

OLED plant lighting suppresses 520 to 580 nm intensity below 20 percent of total output to improve photosynthetic absorption while reducing heat generation.

Crosslinking organic host material enables stable inkjet printing of electron transport layers on display panels.

Staggered stacked metal lines with orthogonal projections positioned within first layer gaps to prevent electrical shorting during manufacturing.

Epitaxial sidewall growth creates high mobility fins on insulator, avoiding expensive EUV lithography and wafer bonding.

Removing a dummy gate stack to the buried insulator creates a dielectric isolation that preserves channel stress and reduces leakage.

Segmented protection elements create direct discharge paths that prevent electrostatic breakdown across different power supply system boundaries.

Gate patterns form isolation regions in GaN transistors, eliminating dedicated masks and reducing leakage current.

A semiconductor device integrates a diode and resistor within an isolation tank to provide bidirectional electrostatic discharge protection.

Vertical vibration modes in the cavity reduce total internal reflection, boosting light extraction efficiency without complex surface roughness.

A P on N semiconductor structure isolates photodiodes to prevent electron diffusion between adjacent pixels.

Oblique intersecting mark patterns enable simultaneous multi-directional coordinate detection for semiconductor wafer alignment.

Segmented shorting bars isolate capacitance in large display panels, reducing voltage drops and propagation delays during signal line repairs.

Segmenting data lines into offset base and line parts minimizes occupied area, enabling compact exposure heads.

A hybrid organic/nanoparticle device integrates silver nanoparticles with small-molecule semiconductors to achieve dual functionality.

Micro-concave structures and distributed pores in the substrate reduce total internal reflection to improve light extraction efficiency.

A photoelectric conversion element uses a fullerene derivative in the active layer to generate power from weak indoor illumination.

A curved OLED display embeds touch and fingerprint detection elements within a single layer structure to reduce device size.

Precharging unselected memory cell strings with elevated channel voltages prevents program disturbance in stacked layers, ensuring accurate data storage.

An insulated common electrode reduces overlap with drain lines, improving contrast and aperture ratio in liquid crystal displays.

A flexible OLED panel uses a thinned substrate region with ductile material to enable folding and extending capabilities.

A non-volatile memory device uses a first electrode layer with a smaller work function than the second electrode to reduce electric resistance at the interface.

A display substrate uses an ordered porous thin film to arrange quantum dots in pore passages between electrode layers.

Hydrogen-free perfluorocarbon etching gas patterns the hard mask layer, preventing polymer deposition on chamber walls.

A molecular interlayer with low surface charge sits between the quantum dot active layer and the electron transport layer.

A separation layer with a shrinking sidewall isolates the display area from substrate openings in narrow bezel designs.

A display panel uses vertically stacked emissive layers to reduce fine metal mask operations and simplify OLED fabrication.

Rib structures pattern source and drain electrodes to define organic semiconductor film boundaries during coating deposition.

Sol-gel composite dielectric reduces driving voltage and power consumption in organic thin film transistors.

A bi-directional split gate NAND flash memory structure uses shared control and select gates to reduce row line count.

A bridge pattern on a planarization layer connects auxiliary patterns in array substrates.