Semiconductor Contact Recrystallization for Lower Contact Resistance
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into a given area with reduced minimum feature sizes, challenges arise in reducing contact resistance and improving device performance.
Innovation Solution
The formation of conductive contacts involves a planarization process followed by an anneal process in the presence of hydrogen gas at temperatures above 100°C, which recrystallizes the conductive contact, reshaping it to enhance the contact area and reduce resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but contact resistance increases and device performance deteriorates
Solution Approach 1:
The patent applies parameter changes by performing an anneal process at temperatures greater than 100°C in the presence of hydrogen gas. This thermal treatment modifies the physical and chemical parameters of the conductive contact material, reducing contact resistance through controlled diffusion and recrystallization processes while maintaining the reduced feature size geometry
Solution Approach 2:
The patent uses hydrogen gas atmosphere during the anneal process to prevent oxidation of the conductive contact material. The hydrogen environment serves as a protective inert atmosphere that allows thermal processing without introducing harmful oxidizing conditions that would increase contact resistance
2Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but device performance deteriorates
Solution Approach 1:
The anneal process at temperatures greater than 100°C in hydrogen gas modifies multiple parameters simultaneously: it reduces contact resistance through material diffusion, recrystallizes the conductive contact structure, and eliminates defects. These parameter changes collectively improve device performance while maintaining the high integration density achieved through reduced feature sizes
3Reliability
If contact area is enlarged to reduce contact resistance, then contact resistance decreases, but manufacturing complexity increases
Solution Approach 1:
The anneal process enables self-service by allowing the conductive contact material to automatically recrystallize and reorganize its structure in the presence of hydrogen gas at elevated temperatures. This self-organizing process enlarges the effective contact area and reduces contact resistance without requiring additional manual intervention or complex manufacturing steps
Solution Approach 2:
By changing the thermal and chemical parameters through annealing in hydrogen gas, the patent achieves contact area enlargement and resistance reduction through controlled material diffusion and phase changes, avoiding the need for complex mechanical or geometric modifications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process reduces contact resistance and enhances device performance by enlarging the contact area between conductive features, providing a device boost.
Implementation Method 1
The anneal process may restructure the conductive contact, such as recrystallizing the conductive contact
Implementation Method 2
An anneal process is performed on the conductive contact. The anneal process may be performed in the presence of hydrogen gas (H2) and may be performed at a temperature greater than about 100° C.
Implementation Method 3
The anneal process may be performed in the presence of hydrogen gas (H2)... The anneal process helps to reduce oxidation of the conductive contact
Data Source
AI summary
Conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.