Semiconductor Component Contactless Current Injection via Electromagnetic Induction
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Solution Overview
Problem
Optoelectronic semiconductor components, such as light diodes based on gallium arsenide or indium phosphide, face inefficiencies due to metal grids causing shading and current inhomogeneities, which reduce light emission efficiency.
Innovation Solution
A method involving a semiconductor layer sequence with a quantum structure active region, cut-outs, and a conducting layer for electrical contact, allowing for homogeneous charge carrier injection and reduced path length for charge carriers, thereby eliminating the need for a metal grid on the semiconductor component.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal grid is used on the radiation exit side for current spreading and electrical contact, then electrical contact and current injection are improved, but shading effects and inhomogeneities in current impression occur, reducing light emission efficiency
Solution Approach 1:
The patent removes the metal grid structure from the radiation exit side and replaces it with a contactless current injection method using a coil antenna. This extracts the harmful shading element while maintaining the essential function of current injection through electromagnetic induction, eliminating the trade-off between electrical contact and light emission efficiency.
Solution Approach 2:
The patent replaces the mechanical metal grid contact system with an electromagnetic field-based current injection system. Instead of physical metal contacts that cause shading, a coil antenna generates an alternating magnetic field that induces currents in the semiconductor layer, substituting mechanical/electrical contact with a field-based mechanism that does not obstruct light emission.
2Ease of operation
If a metal grid is used for current spreading, then current distribution is improved, but inhomogeneities in current impression occur, reducing efficiency
Solution Approach 1:
The patent replaces the metal grid's current spreading function with an electromagnetic induction system. The coil antenna generates an alternating magnetic field that penetrates the semiconductor layer and induces eddy currents throughout the active region, achieving uniform current distribution without the inhomogeneities caused by metal grid structures.
Solution Approach 2:
The patent changes the method of current injection from direct electrical contact through metal grids to contactless electromagnetic induction. By varying the frequency and intensity of the alternating magnetic field from the coil antenna, uniform current distribution is achieved throughout the semiconductor layer without the localized inhomogeneities inherent in grid-based systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the efficiency of semiconductor components by ensuring uniform charge carrier injection and reduced absorption paths, leading to improved light emission or reception efficiency without the shading effects of metal grids.
Implementation Method 1
a coil antenna is provided, said coil antenna having a winding axis perpendicular to a main extension plane of the semiconductor layers and arranged at a distance from the semiconductor layers in a direction of the winding axis, wherein an alternating magnetic field is generated in a region comprising the semiconductor layers by means of the coil antenna, in particular by means of an alternating current flowing through the coil antenna
Implementation Method 2
an active region provided for generating and/or receiving radiation. In a semiconductor chip provided for generating radiation the active region preferably has a quantum structure
Data Source
AI summary
A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.