Semiconductor/Solid-State Device Details TRIZ Cases

Merging die pad and heat sink functions into single leads resolves thickness versus thermal dissipation contradictions.

A wafer-to-wafer bonding method arranges singulated chips on a carrier and bonds them to a support wafer using heat-activated adhesive.

A via plug connects upper and lower pad structures through insulating layers to establish electrical pathways.

Alkoxysilyl novolac curing agent reduces coefficient of thermal expansion while maintaining processability for semiconductor substrates.

A chip package substrate features positive alignment elements reinforced by a mechanical layer to increase lateral shear strength.

Segmented thermal conduits draw heat from hot integrated circuits while isolating cooler components, preventing overheating in high-density memory modules.

Rearranges singulated chips into vertical stacks, allowing new wafer specifications to be processed with existing equipment without specialized factory setups.

Conductive tabs and electrical connectors enable vertical stacking of semiconductor die, reducing footprint while managing manufacturing complexity.

Viscosity-doubling organopolysiloxane sealant cures completely at room temperature, eliminating thermal stress and ensuring reliability.

A sintered joint bonds a semiconductor chip directly to a copper surface using a low temperature joining process.

A thin metal connecting layer distributes thermal stress while a benzotriazole rust-preventing film covers side walls to prevent corrosion at the interface.

Resin molded casing seals circuit board and connector, reducing vibration noise without adding construction members.

Inclined protrusion sandwiches terminal against sidewall to prevent misalignment and mechanical stress under load.

Copper gate shunting wiring distributes potential evenly to lower gate resistance and improve switching speed without increasing die size.

A semiconductor component uses a coil antenna to induce alternating magnetic fields for homogeneous charge carrier injection.

Embossed patterns on the heat spreader plate expand thermal contact area and improve mechanical integrity under varying airflow conditions.

Self-imageable norbornene polymers with polyether side chains cure at 200°C or lower, eliminating high-temperature processing and special handling conditions.

Removing the substrate carrier from TSV chip packaging reduces thickness and warpage while maintaining mechanical strength through a stress relief film layer.

Backside redistribution layers resolve signal routing density limits in through-hole via structures by adding planar routing paths.

Interlaced fins on two parts mesh with an insulating layer to resolve the trade-off between thermal conductivity and electrical insulation.

Roughened depression surfaces prevent ion migration by enhancing adhesion, maintaining insulation reliability during accelerated stress testing.

Non-vertical paddle and inner lead edges prevent mold flash from covering contact pads, ensuring reliable PCB connections.

Removing wire bonds via embedded conductors allows full power testing and efficient thermal dissipation from both die surfaces.

Alternating insulating layers with distinct thermal expansion coefficients balance substrate forces, reducing warping during manufacturing.

Atomic layer deposition creates a dual-layer Mn/MnN barrier on via sidewalls and bottom, preventing copper electromigration where single-layer processes fail.

A tungsten seed layer enables copper electrofill in through silicon vias while serving as a diffusion barrier.

Segmenting the card body into standardized substrate layers with overlapping contact surfaces simplifies production of complex connecting conductor structures.

A two-stage through-hole structure with a protective film prevents furrow defects in semiconductor substrates.

A stacked integrated circuit leadframe system packages top and bottom chips vertically on a single substrate.

Oxygen plasma cleans circuit assemblies without sputtering palladium from copper bond wires, preventing encapsulation voids and improving device reliability.

A passive coupler uses a solenoid and signal line to capture electromagnetic signals with high directivity.

Segmented manufacturing and nested driver circuitry reduce substrate size and power consumption while improving assembly yield.

Conductive pillars and micro-bumps establish vertical electrical interconnection between stacked semiconductor die.

A stress mitigation layer melts at operating temperatures to absorb thermomechanical stresses within power electronic assemblies.

A liquid thermal interface material fills a sealed internal cavity to establish direct thermal contact with a semiconductor chip and circuit board.

Symmetric three-layer wraparound lead package design counters thermal expansion mismatch between heat spreader and insulator to maintain flat surface geometry.

Spatial light modulator patterns laser beams to weld multiple bump electrodes simultaneously, resolving non-uniform heating and reducing processing time.

Through-silicon vias in a hybrid baseband die reduce contact distances between stacked devices, lowering resistive heating.

An insulation layer groove positions a reflective layer to improve luminous efficiency despite complex electrode alignment.

A semiconductor package integrates a heat sink with a peripheral stepped portion to facilitate cutting into individual units.

A stepped sub-heat sink joins a switching element package to a main heat sink using high thermal conductivity aluminum.

A stackable semiconductor package uses an adhesive layer and supporting element to join inverted chips while stabilizing overhanging substrates.

Encapsulation material within isolation areas prevents cross-conduction and crosstalk between integrated transistors.

Exposed tie bars on a small outline transistor dissipate heat while providing mold locking, avoiding production costs of separate thermal pads.

A semiconductor package structure embeds a chip within dielectric layers and extends a redistribution circuit layer onto the active surface.

A flexible substrate package uses a sacrificial layer to protect thin films during bending.

Rotating pickup assemblies transfer chips between supply and substrate units via vertical flip transmission, eliminating long linear transport distances.

Graphene barriers prevent metal diffusion into dielectrics while maintaining atomic thickness to lower line resistance.

A substrate bump structure with a constricted diameter profile disperses mounting stress to suppress cracking.

Extrusion-based additive manufacturing deposits thermoplastic substrate layers to create 3D structural electronic components.

A fan-out semiconductor package structure uses a redistribution layer to route conductive terminals across an expanded surface area.

Auxiliary layer protrusions enable selective spacer removal to increase spacing between line ends.

A sacrificial organic layer blocks flux and tin deposition on lead fingers, preventing tin cloud formation that compromises wire bond integrity.

A hybrid packaging structure merges printed circuit boards with lead frames to integrate surface mount components and IC dice.

A semiconductor package uses via patterns in encapsulation to connect stacked chips without deep through-silicon vias.

Sidewall conductors eliminate bulky ball grid arrays and through-package vias, reducing signal delay in compact packages.

WNx deposition prevents copper diffusion while maintaining low dielectric constants to preserve signal transmission speed.

Adhesion elements secure copper wirebond sites to dielectric layers, preventing seam formation and delamination in fine pitch arrays.

Skip vias link outermost and second conductor layers while controlling insulation distances to eliminate processing delays from non-uniform signal speeds.

A reflective surface projects connection terminal images for precise semiconductor device alignment.

Segmented patterning reduces exposure steps and dummy area, lowering costs for 3D cross-point memory devices.

Vertical conductive posts interconnect substrate and chip terminals within an encapsulant, reducing circuit panel complexity and area occupation.

A graded modulus underfill material segregates filler particles to create spatially varying elastic properties within semiconductor device assemblies.

Integrating an antenna with a conductive line via a resonant pad reduces transmission path length to improve signal quality.

Spring terminal constriction distributes stress and accommodates positional deviations, preventing contact failure in semiconductor modules.

A solid conducting layer on the backside of an image sensor substrate provides electrical connectivity via through silicon vias.

Internal power tracks in standard cells prevent shorts at small feature sizes while maintaining drive performance.

An interposer chip transmits type information to an interface chip, enabling dynamic data bus width adaptation without replacing hardware components.

Lattice heat dissipating conductors in the buildup layer reduce temperature while maintaining compact size.

Protruding graphene fins increase exposed surface area to reduce device temperature without expanding volume.

A package board featuring a penetrating cavity and segmented connection pads minimizes bridge defects while enabling fine pitch connections.

An integrated circuit uses an additional drive pad to control overvoltages at power transistor terminals.

Differentiated conductive bonding member thickness reduces thermal stress on the chip while preventing wire bonding tool contact.

A thickness-shaped IC die with a protruding lip secures to a substrate gap region, reducing CTE stress and preventing adhesive bleeding.

A semiconductor package integrates a thermal conductive layer on the chip backside to enhance heat dissipation efficiency.

Coplanar resin-molded components allow a single heat sink to dissipate heat from dense circuit boards without increasing structural complexity.

Non-uniform electrode geometry and spacers reduce contact area to enhance thermal efficiency and phase change performance in PCM cells.

A semiconductor device uses vertical stacking of cell gate conductive patterns and bit line contact plugs to enhance integration density.

Segmented housing and cover enclose circuit boards to dampen vibrations, resolving the trade-off between robust protection and difficult epoxy-based repairs.

A BGA solder joint uses a specific Cu, Ag, Bi, In, and Sn alloy ratio to maintain electric conduction.

A multi-layer bonding pad structure uses dielectric pillars to handle increased mechanical loads during wire bonding.

A silicone-epoxy resin film molds large-diameter thin wafers while minimizing warpage and preventing short shots during transfer.

An organic bridge with a pad layer connects chips using uniform-sized bumps, resolving assembly yield issues caused by silicon bridge size mismatches.

A semiconductor lead features a protruding portion with a positioning hole and slit for precise mechanical alignment.

Series parasitic capacitance diverts common mode currents to reduce electromagnetic interference from wide bandgap transistors.

Second UBM ground planes connect separated redistribution traces without shorts, reducing packaging complexity.

Negative coefficient of thermal expansion fibers in the dielectric layer counterbalance metal expansion, reducing residual stresses and substrate warpage.

A bridge chip assembly uses a non-conductive underfill film to interconnect IC dies without capillary flow.

Edge portions on vertically stacked gate electrodes concentrate electric fields, improving charge retention while reducing manufacturing costs.

An electrostatic discharge pattern in a printed circuit board bridge area dissipates static charge during serial cutting.

Thin yttrium metal contacts replace thick lithium diffused layers, enabling fine segmentation and low leakage current in germanium gamma-ray spectroscopy.

Protruding conductor layers improve data retention in pillar-shaped semiconductor memory devices by reducing tunnel insulating layer defects.

A metal dam confines underfill flow within chip-on-chip gaps, preventing coverage of bond pads and ensuring successful wire bonding.

Liquid adhesive distributes via gravity and capillary forces during linear substrate movement, preventing gas inclusions and surface roughness defects.

A grounded conductive layer extends from the cover plate to the light-emitting panel.

A wedge element bridges the gap between a semiconductor chip and a heat sink to establish high thermal conductivity.

Reentrant corner shapes in dummy conductors suppress eddy currents via the skin effect, reducing circuit constant fluctuations at 5 GHz.

A conductive cap with greater hardness enhances shear strength at the interface between bonded copper layers.