Semiconductor Multilayer Wiring with Copper and Aluminum Interconnects

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Solution Overview

Problem

In semiconductor devices with multilayer wiring structures, the use of copper wiring leads to corrosion issues due to oxidation, reducing the reliability of electrical connections, and the conventional solution of using aluminum electrode pads increases manufacturing costs and steps.

Innovation Solution

A semiconductor device with a multilayer wiring structure that incorporates a copper wire, an insulating film, an aluminum wire electrically connected via a via hole, and a surface protective film with a pad opening for the aluminum wire to function as an electrode pad, utilizing a tungsten plug for connection and a barrier layer to prevent corrosion and peeling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If Cu wiring material is used to reduce wiring resistance, then conductivity is improved, but corrosion resistance deteriorates due to oxidation

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidoxidation corrosion
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A Ta (tantalum-based) barrier film is introduced as an intermediary layer between the Cu wire and the insulating film. This barrier film prevents diffusion of Cu into the insulating film and protects the Cu wire from oxidation corrosion, thereby maintaining electrical connection reliability while allowing the use of high-conductivity Cu wiring material.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs a composite structure consisting of Cu wire embedded in a Ta barrier film, which is then embedded in the insulating film. This composite material approach combines the high conductivity of Cu with the corrosion resistance and diffusion barrier properties of Ta, resolving the contradiction between conductivity improvement and corrosion resistance.

Inventive Principle:
Principle #40Composite materials

2Object-affected harmful factors

If Al electrode pad is added to cover exposed Cu wire for corrosion protection, then corrosion resistance is improved, but manufacturing complexity increases due to additional process steps

Engineering Contradiction:
Improvecorrosion resistanceVSAvoidnumber of manufacturing steps
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent merges the functions of the electrode pad and the corrosion protective layer into a single Al-based structure. The Al wire serves both as the electrical connection conductor and as the corrosion-protected electrode pad, eliminating the need for separate Al electrode pad formation steps and reducing manufacturing complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The Al wire structure is designed to perform multiple functions simultaneously: it provides electrical connection, serves as the electrode pad for external connections, and offers corrosion protection due to Al's natural oxide formation. This multi-functionality eliminates the need for additional dedicated corrosion protective layers.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the reliability of electrical connections with external portions, reduces manufacturing costs by integrating the aluminum wire as both a wiring layer and electrode pad without increasing process steps, and improves the connection reliability of copper and aluminum wires.

Implementation Method 1

a Ta (tantalum-based) barrier film for preventing diffusion of Cu into the insulating film

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 2

Al (aluminum) which has excellent corrosion resistance

Methodology Applied
Scientific EffectOxidation resistance: Oxidation

Data Source

PatentUS8164160B2Semiconductor device
Publication Date: 2012.04.24 ROHM CO LTD
  • US8164160B2 patent drawing
  • US8164160B2 patent drawing
  • US8164160B2 patent drawing

AI summary

A semiconductor device according to the present invention has a multilayer wiring structure laminating and disposing a plurality of with sandwiching an insulating film and includes: a copper wire having copper as a main component; an insulating film formed on the copper wire; an aluminum wire having aluminum as a main component and formed on the insulating film to be electrically connected to the copper wire via a via hole formed to penetrate through the insulating film; and a surface protective film formed on the aluminum wire; and the surface protective film formed with a pad opening exposing a portion of the aluminum wire as an electrode pad for electrical connection with an external portion.