3D Crack Detection Structure in Semiconductor Devices

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Solution Overview

Problem

Conventional semiconductor devices struggle to detect cracks effectively, particularly horizontal cracks that do not penetrate the top surface, leading to yield losses in defective products.

Innovation Solution

A semiconductor device with a three-dimensional crack detection structure formed in a ring shape in the peripheral region, extending vertically to surround the central region, which includes a conduction loop connecting multiple conduction layers to detect cracks of various types by applying test signals and comparing input and output signals for voltage drop or phase differences.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a two-dimensional crack detection structure is used, then the device complexity is low, but the measurement precision for detecting horizontal cracks is insufficient

Engineering Contradiction:
Improvecrack detection precisionVSAvoiddetection structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent transitions from a two-dimensional crack detection structure to a three-dimensional structure by adding vertical extension through multiple conduction layers. This dimensional change enables detection of horizontal cracks that do not penetrate the top surface, directly resolving the measurement precision issue while accepting increased structural complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Measurement precision

If a three-dimensional crack detection structure with multiple conduction layers is used, then the measurement precision for crack detection is improved, but the device complexity increases

Engineering Contradiction:
Improvecrack detection precisionVSAvoiddetection structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The three-dimensional crack detection structure serves multiple detection functions simultaneously - it can detect both vertical cracks and horizontal cracks across different depths. The conduction loop spanning multiple conduction layers provides universal crack detection capability, justifying the increased complexity through enhanced functional versatility

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The crack detection structure employs nested conduction layers where inner conduction loops are positioned within outer conduction loops across different vertical levels. This nested arrangement enables comprehensive crack detection at multiple depths while organizing the complex structure in a systematic, space-efficient manner

Inventive Principle:
Principle #7Nested doll (Nesting)

3Productivity

If conventional two-dimensional detection structures are used, then the manufacturing process is simple, but the productivity due to yield losses from undetected cracks is reduced

Engineering Contradiction:
Improveyield rateVSAvoidmanufacturing complexity
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The three-dimensional crack detection structure performs preliminary detection of cracks during the manufacturing process itself, identifying defects before final product completion. By detecting horizontal cracks that conventional methods miss, it prevents yield losses from undetected defects, improving productivity despite increased manufacturing complexity

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances crack detection capabilities, reducing yield losses by thoroughly identifying cracks of all types, including those that conventional two-dimensional structures miss, thereby improving product quality.

Implementation Method 1

detect cracks of various types by applying test signals and comparing input and output signals for voltage drop or phase differences

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS9768129B2Semiconductor device including three-dimensional crack detection structure
Publication Date: 2017.09.19 SAMSUNG ELECTRONICS CO LTD
  • US9768129B2 patent drawing
  • US9768129B2 patent drawing
  • US9768129B2 patent drawing

AI summary

A semiconductor device includes a semiconductor die, a semiconductor integrated circuit and a three-dimensional crack detection structure. The semiconductor die includes a central region and a peripheral region surrounding the central region. The semiconductor integrated circuit is formed in the central region. The three-dimensional crack detection structure is formed in a ring shape in the peripheral region to surround the central region. The three-dimensional crack detection structure is expanded in a vertical direction. Using the three-dimensional crack detection structure, the crack penetration of various types may be detected thoroughly.