3D Semiconductor Detector With Resistive Biasing
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Solution Overview
Problem
Existing semiconductor detectors face limitations such as high capacitance, sensitivity issues, smear effects, and horizontal spreading of signal charge, which hinder their efficiency in detecting deeply penetrating radiation and withstanding high voltages, especially in thick substrates.
Innovation Solution
A 3D semiconductor apparatus with a constant vertical electric field component is achieved by incorporating resistive paths between the front and back surfaces, allowing for controlled current flow and preventing horizontal signal charge spreading, thereby simplifying manufacturing and enabling high voltage resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If planar detectors use thick depleted volume to detect deeply penetrating radiation, then detection efficiency improves, but depletion voltage increases proportionally to the square of thickness and horizontal spreading of signal charge occurs
Solution Approach 1:
The patent transitions from planar (2D) electrode configuration to three-dimensional (3D) electrodes that penetrate through the substrate. This dimensional change creates a horizontal electric field component that prevents signal charge spreading while enabling thick substrate depletion at lower voltages, directly resolving the contradiction between detection efficiency and voltage consumption
2Measurement precision
If 3D electrodes are used to prevent horizontal spreading of signal charge, then spatial resolution improves, but capacitance of signal charge collecting electrodes increases due to large surface area
Solution Approach 1:
The patent applies local quality by creating highly doped regions specifically at the 3D electrode tips where charge collection occurs. This localized high doping concentration reduces the depletion layer thickness and capacitance at the collection points while maintaining the horizontal electric field component for spatial resolution, thus resolving the contradiction between measurement precision and capacitance
3Length of stationary object
If planar detectors use high voltages to create thick depletion region, then detection depth improves, but horizontal spreading of signal charge hampers spatial resolution
Solution Approach 1:
The patent introduces a horizontal electric field component through 3D electrodes that acts perpendicular to the vertical depletion field. This horizontal field component confines signal charges vertically without requiring high voltages, enabling thick depletion regions while maintaining spatial resolution, thus resolving the contradiction between depletion region thickness and spatial resolution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a semiconductor apparatus that can be manufactured easily, has low capacitance, is immune to smear, and can withstand very high voltages without thickness-dependent electric field limitations, enhancing detection efficiency and spatial resolution.
Implementation Method 1
there is running a current between the front and back surfaces through the resistive path
Implementation Method 2
The electric field in the depleted volume separates the electron hole pairs
Implementation Method 3
The depleted volume is created typically by a reverse biased pn junction
Data Source
AI summary
An improved semiconductor apparatus that comprises an elongated structure that extends into the substrate. The apparatus comprises a collection contact, a resistive path, a bias connection that creates along the length of the elongated structure, an electric field component that drives signal charge carriers in a direction perpendicular to the elongated structure, and a second bias that generates a current flow that creates within the substrate a constant electric field component to drive signal charge carriers towards the collection contact on the first surface.