Semiconductor Device Outer Solder Portion Thermal Management
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Solution Overview
Problem
In semiconductor devices, the outer solder portion is prone to distortion and cracking due to uneven heat expansion/contraction, caused by higher carrier density leading to increased heat generation in the semiconductor substrate during operation.
Innovation Solution
The semiconductor device is configured with a lower carrier density in the outer substrate portion compared to the inner substrate portion, reducing heat generation and preventing the outer solder portion from being heated.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the outer solder portion is exposed from the end portion of the metal member, then the solder layer can be easily formed, but the outer solder portion becomes distorted and cracked due to uneven heat expansion/contraction
Solution Approach 1:
The patent applies local quality by creating a non-uniform carrier density distribution in the semiconductor substrate, with lower carrier density in the outer substrate portion and higher carrier density in the inner substrate portion. This localized variation in material properties results in differential heat generation that compensates for the uneven thermal expansion of the exposed outer solder portion, preventing distortion and cracking while maintaining manufacturing simplicity
2Productivity
If the density of carriers flowing through the outer substrate portion is high, then the semiconductor device operates efficiently, but the outer substrate portion generates excessive heat causing solder layer distortion and cracking
Solution Approach 1:
The patent implements local quality by establishing a spatially varying carrier density profile within the semiconductor substrate. The outer substrate portion is designed with lower carrier density to reduce Joule heating, while the inner substrate portion maintains higher carrier density for efficient current conduction. This localized differentiation allows the device to operate efficiently overall while preventing excessive temperature rise in the outer region where the solder layer is most vulnerable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the temperature rise in the outer substrate portion, preventing the outer solder portion from distortion and cracking, thereby enhancing the reliability of the semiconductor device.
Implementation Method 1
The generation of heat in the semiconductor substrate is attributed to carriers flowing through the semiconductor substrate while the semiconductor device is on
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a front surface electrode provided on a front surface of the semiconductor substrate, a solder layer, and a metal member fixed to a front surface of the front surface electrode via the solder layer. The solder layer includes an inner solder portion positioned inner than an end portion of the metal member and an outer solder portion positioned outer than the end portion of the metal member, relative to a direction along the front surface of the semiconductor substrate. The semiconductor substrate includes an inner substrate portion positioned below the inner solder portion and an outer substrate portion positioned below the outer solder portion. A density of carriers that flow from the outer substrate portion to the front surface electrode is lower than a density of carriers that flow from the inner substrate portion to the front surface electrode.