Semiconductor Device With Variable Thickness Supporter
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Solution Overview
Problem
The integration of semiconductor devices is limited by the complexity of forming electrode isolation trenches without increasing the overall thickness, which is a challenge in achieving higher density and performance.
Innovation Solution
The semiconductor device design includes a supporter with varying thicknesses in different regions, where the thickness adjacent to the electrode isolation trench is greater than in regions with channel holes, allowing for trench formation without increasing the device's overall thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the supporter thickness is increased to reduce formation risk of electrode isolation trench, then the reliability is improved, but the overall device thickness increases
Solution Approach 1:
The supporter is designed with non-uniform thickness, having a first thickness in a first region adjacent to the electrode isolation trench and a second thickness in a second region between the trench and channel hole. The first thickness is greater than the second thickness, providing localized structural support where needed during trench formation while maintaining thinner dimensions in other areas to control overall device thickness.
2Productivity
If the degree of integration is increased for higher performance and lower price, then the productivity is improved, but the manufacturing complexity increases
Solution Approach 1:
The variable thickness supporter structure provides localized mechanical support in the first region adjacent to the electrode isolation trench, enabling more aggressive patterning and higher integration density without compromising structural integrity during fabrication. This allows increased productivity through higher integration while managing the complexity of fine pattern formation.
Data Source
AI summary
A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.