Semiconductor Die Bonding With Horizontal And Vertical Interfaces
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Solution Overview
Problem
Conventional wafer bonding or die bonding techniques primarily utilize vertical connections between semiconductor dies, limiting the number of bonding locations and density due to the reliance on horizontal bonding interfaces that are parallel to the gap between the dies.
Innovation Solution
The implementation of both horizontal and vertical bonding interfaces simultaneously, achieved by bonding proximal and distal bonding pads on one semiconductor die to corresponding pads on another die, increasing the number and density of bonding locations through a dual interface approach.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional wafer bonding or die bonding techniques are used with only horizontal bonding interfaces, then the bonding process is simple, but the number and density of bonding locations are limited
Solution Approach 1:
The patent transitions from conventional single horizontal bonding interface to a dual-interface structure incorporating both horizontal and vertical bonding interfaces. The vertical bonding interfaces are formed by creating bonding pads on the sidewalls of the semiconductor dies, effectively adding a new dimensional aspect to the bonding process. This dimensional expansion allows for increased number and density of bonding locations without significantly complicating the overall bonding procedure.
2Quantity of substance
If multiple bonding interfaces are implemented to increase bonding density, then the number of bonding locations increases, but the manufacturing complexity increases
Solution Approach 1:
The bonding pads are segmented into different functional regions: horizontal bonding pads for face-to-face bonding and vertical bonding pads for sidewall bonding. This segmentation allows each type of bonding pad to be optimized for its specific bonding orientation while maintaining a unified bonding process. The segmentation enables increased bonding density without requiring entirely separate bonding processes for horizontal and vertical interfaces.
3Productivity
If only vertical connections are used between semiconductor dies, then the bonding process is straightforward, but the metal interconnection capacity is limited
Solution Approach 1:
The invention adds vertical bonding interfaces on the sidewalls of bonding pads, effectively utilizing the third dimension (sidewall surface) for additional metal interconnections. This dimensional utilization transforms the traditionally two-dimensional horizontal bonding interface into a three-dimensional bonding structure, thereby increasing metal interconnection capacity without requiring complex multi-layer interconnect structures.
Data Source
AI summary
A first semiconductor die includes first bonding pads. The first bonding pads include proximal bonding pads embedded within a first bonding dielectric layer and distal bonding pads having at least part of the sidewall that overlies the first bonding dielectric layer. A second semiconductor die includes second bonding pads. The second bonding pads are bonded to the proximal bonding pads and the distal bonding pads. The proximal bonding pads are bonded to a respective one of a first subset of the second bonding pads at a respective horizontal bonding interface and the distal bonding pads are bonded to a respective one of a second subset of the second bonding pads at a respective vertical bonding interface at the same time. Dielectric isolation structures may vertically extend through the second bonding dielectric layer of the second semiconductor die and contact the first bonding dielectric layer.