Semiconductor Diode Turnaround Layout for ESD Leakage

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Solution Overview

Problem

In semiconductor devices with linearly connected diodes as ESD protection elements, the finer design rules can interfere with other semiconductor elements, leading to potential damage from electrostatic discharge due to current leakage between the input and output terminals.

Innovation Solution

The diodes are connected in a series with a turnaround pattern, where the first and last diodes are arranged such that their N-type and P-type regions do not directly oppose each other, reducing the likelihood of damage from electrostatic discharge by applying voltage in a reverse direction and maintaining a distance between them.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If diodes are linearly connected in one direction, then the ESD protection function is provided, but the diodes interfere with other semiconductor elements due to finer design rules

Engineering Contradiction:
ImproveESD protection functionVSAvoidlayout interference
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from a linear one-dimensional arrangement of diodes to a two-dimensional turnaround pattern. The diode string is folded back on itself, extending in one direction and then returning in a perpendicular or opposite direction, effectively utilizing additional spatial dimensions to accommodate the ESD protection structure without interfering with other elements.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If a turnaround pattern is used to avoid interference, then layout flexibility is improved, but current leakage occurs between input and output terminals causing diode damage

Engineering Contradiction:
Improvelayout flexibilityVSAvoiddiode protection from current leakage
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent introduces an intermediate insulating structure or spacing element between the input terminal region and output terminal region in the turnaround pattern. This intermediary element prevents direct current leakage paths while maintaining the turnaround layout configuration, effectively mediating between the need for layout flexibility and the requirement for electrical isolation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies preliminary protective measures by designing the turnaround pattern with built-in electrical isolation features before ESD events occur. The layout is configured in advance to prevent current leakage paths, using insulating layers or spacing that are pre-established in the device structure to counteract potential harmful current flow.

Inventive Principle:
Principle #9Preliminary anti-action

3Area of stationary object

If the first and last diodes are positioned close together in turnaround pattern, then layout space is saved, but electrostatic discharge damages the diodes through current leakage

Engineering Contradiction:
Improvelayout spaceVSAvoidelectrostatic discharge damage
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

An insulating intermediary structure or increased spacing is introduced between the first and last diodes in the turnaround pattern. This intermediary element maintains electrical isolation and prevents ESD-induced current leakage while allowing the diodes to be positioned relatively close together, thus saving layout space.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies different spatial relationships to different parts of the diode string. While intermediate diodes may be closely spaced to save area, the critical first and last diodes are given enhanced spacing or insulating treatment locally to prevent ESD damage, creating non-uniform spatial distribution optimized for both area efficiency and protection.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10636781B2Semiconductor device
Publication Date: 2020.04.28 MURATA MFG CO LTD
  • US10636781B2 patent drawing
  • US10636781B2 patent drawing
  • US10636781B2 patent drawing

AI summary

Connection patterns of plural diodes include a first series connection pattern and a second series connection pattern. The first series connection pattern extends from an input terminal in the X direction. The second series connection pattern has a portion through which a current flows to approach the input terminal. The first series connection pattern includes a first diode, which is the first diode counted from the input terminal. The second series connection pattern includes a second diode, which is the last diode counted from the input terminal. The second diode is disposed separately from the first diode with some distance therebetween in the Y direction. An N-type region of the first diode and a P-type region of the second diode directly oppose each other as viewed in a planar direction.