Semiconductor Device for Constant Discharge Current Impedance Measurement

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Secondary batteries like lithium-ion batteries face challenges in accurately measuring internal impedance due to variations in discharge current caused by voltage and temperature, leading to inaccurate impedance measurement and safety concerns.

Innovation Solution

A semiconductor device with a face-down mounted chip-size package type, featuring a field-effect transistor and a resistor connected in series, along with a control circuit that maintains a constant discharge current regardless of applied voltage, ensuring a temperature difference of less than five degrees Celsius between the two components, thereby accurately measuring internal impedance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a discharge current is used to measure internal impedance, then measurement capability is provided, but current variation due to voltage and temperature causes measurement inaccuracy

Engineering Contradiction:
Improveinternal impedance measurement accuracyVSAvoiddischarge current constancy
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent employs a feedback control mechanism where the control circuit continuously monitors the discharge current and adjusts the field-effect transistor gate voltage to maintain constant current flow despite variations in battery voltage or temperature, ensuring accurate impedance measurement

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent changes the operating parameters of the field-effect transistor (gate voltage) in response to detected current variations, dynamically adjusting these parameters to compensate for voltage and temperature effects on discharge current stability

Inventive Principle:
Principle #35Parameter changes

2Reliability

If high power loss area ratio is used to maintain constant current, then current control capability is improved, but heat generation increases causing temperature variation

Engineering Contradiction:
Improvedischarge current constancyVSAvoidcomponent temperature difference
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent applies local quality by creating distinct thermal management zones within the semiconductor device, with heat dissipation structures strategically positioned near high-power components like the field-effect transistor and resistor to locally manage heat generation and maintain uniform temperature distribution

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent converts the harmful effect of heat generation into a beneficial thermal equilibrium state by designing the device to distribute power loss and heat generation uniformly across components, where the heat generated by the field-effect transistor compensates for heat losses in the resistor, maintaining stable operating temperatures

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Reliability

If field-effect transistor and resistor are connected in series with high power loss, then constant current control is achieved, but heat concentration occurs in specific regions

Engineering Contradiction:
Improvedischarge current controlVSAvoidheat concentration
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent segments the power loss and heat generation across multiple components (field-effect transistor and resistor) connected in series, with each component designed to handle a portion of the total power dissipation, preventing heat concentration in a single location and enabling better thermal management

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device enables precise measurement of internal impedance by maintaining a constant discharge current and dispersing heat, reducing the influence of temperature variations and improving measurement accuracy.

Implementation Method 1

a power loss area ratio of at least 0.4 (W/mm2) obtained by dividing a power loss (W) in the semiconductor device at time of the discharge by an area (mm2) of the semiconductor device

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS11585860B2Semiconductor device
Publication Date: 2023.02.21 NUVOTON TECH CORP JAPAN
  • US11585860B2 patent drawing
  • US11585860B2 patent drawing
  • US11585860B2 patent drawing

AI summary

A semiconductor device that is of a face-down mounted chip-size package type, discharges electric charges stored in an electric storage device (battery), and has a power loss area ratio of at least 0.4 (W/mm2) obtained by dividing a power loss (W) in the semiconductor device at time of the discharge by an area (mm2) of the semiconductor device, the semiconductor device comprising: a field-effect transistor of a horizontal type and a resistor that are connected in series in stated order between an inflow terminal and an outflow terminal; and a control circuit that causes a discharge current to be constant without depending on an applied voltage between the inflow terminal and the outflow terminal. A difference between a maximum temperature of a field-effect transistor portion and a temperature of a resistor portion is within five degrees Celsius in a discharge period.