Semiconductor Display Transistors Using Metal Oxide Stacking
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Solution Overview
Problem
Current semiconductor devices for display systems face challenges in achieving high integration, high withstand voltage, high-speed operation, reliability, low power consumption, and user-preferred image processing, particularly in applications requiring high pixel density and precise signal transmission.
Innovation Solution
The semiconductor device incorporates a pixel portion, driver circuit, signal generation circuit, and level shifter with transistors formed using a semiconductor substrate and metal oxide semiconductor films, enabling high integration, high withstand voltage, and low power consumption, while allowing for user-preferred image processing through neural network-based signal generation and processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If metal oxide semiconductor films are used in transistors, then withstand voltage is improved and power consumption is reduced, but integration density and manufacturing complexity face challenges
Solution Approach 1:
The patent changes the material parameter from conventional silicon-based semiconductors to metal oxide semiconductors (such as IGZO - indium gallium zinc oxide), which inherently provide higher withstand voltage capabilities and lower power consumption while enabling new device architectures
Solution Approach 2:
The patent implements multi-layer stacked transistor structures where transistors are nested vertically over the same substrate area, achieving high integration density while maintaining the advantages of metal oxide semiconductor films for high withstand voltage and low power operation
2Measurement precision
If high pixel density is achieved, then display resolution is improved, but signal transmission precision and power consumption are compromised
Solution Approach 1:
The patent transitions from planar 2D transistor layouts to 3D vertically-stacked architectures, allowing high pixel density and fine display resolution without proportionally increasing power consumption, as the vertical stacking reduces the area per pixel while metal oxide semiconductors provide low leakage current
Solution Approach 2:
The use of metal oxide semiconductor materials provides inherently lower off-state current and power consumption, enabling high-resolution displays with fine pixel densities to operate with reduced power requirements compared to conventional silicon-based transistors
3Ease of manufacture
If conventional silicon semiconductors are used, then manufacturing process is established, but integration density and power consumption cannot meet next-generation requirements
Solution Approach 1:
The patent transitions from silicon-based semiconductors to metal oxide semiconductors, changing the material parameter to achieve higher integration density and lower power consumption while developing new manufacturing processes that leverage sputtering and atomic layer deposition techniques for precise film control
Solution Approach 2:
The patent employs composite material structures combining metal oxide semiconductor layers with conventional semiconductor components and multi-layer insulating films, creating hybrid architectures that achieve high integration density while maintaining manufacturability through adapted conventional fabrication processes
Data Source
AI summary
A novel semiconductor device or display device is provided. A semiconductor substrate is used as a substrate of a display portion and a transistor in the display portion is formed using the semiconductor substrate. In this way, variation in the characteristics of the transistors among pixels is reduced and pixel density can be increased. Moreover, transistors used for a driver circuit, a signal generation circuit, and a level shifter are formed using the semiconductor substrate. As a result, these circuits can be formed directly on the substrate of the display portion, whereby bonding of a chip and the substrate is unnecessary. Furthermore, these circuits can be easily connected to each other, so that signal delay or an increase in power consumption due to complicated wirings can be prevented.