Semiconductor Doping Layer Gradient for Short Channel Effect Suppression
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Solution Overview
Problem
As display apparatus resolution increases, the reduced area of unit pixels leads to shorter thin film transistor channel lengths, potentially causing a short channel effect, which existing semiconductor devices struggle to address effectively.
Innovation Solution
A semiconductor device structure is developed with a doping layer having a concentration gradient, including a first doping layer with a lower dopant concentration and a second doping layer with a higher concentration, positioned between the semiconductor layer and the source and drain electrodes, which suppresses the short channel effect without requiring additional space or longer channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the channel length of thin film transistors is reduced to increase display resolution, then the area of unit pixels is reduced, but a short channel effect occurs in the thin film transistors
Solution Approach 1:
The patent introduces a doping layer with non-uniform dopant concentration distributed in the semiconductor layer beneath the gate electrode. The dopant concentration varies locally, being higher near the source and drain regions and lower in the channel region, creating different electrical properties in different areas of the semiconductor layer to suppress the short channel effect while maintaining small pixel area
Solution Approach 2:
The patent changes the dopant concentration parameter in the semiconductor layer by introducing a doping layer with graded concentration. This parameter change modifies the electrical characteristics of the thin film transistor, specifically suppressing the short channel effect that occurs when channel length is reduced for higher display resolution
2Reliability
If a doping layer with concentration gradient is introduced to suppress short channel effect, then device characteristics are improved, but the device structure becomes more complex
Solution Approach 1:
The doping layer is segmented into multiple regions with different dopant concentrations. The concentration gradient is divided into distinct zones: a first doping region with higher concentration near the source and drain, and a second doping region with lower concentration in the channel area. This segmentation allows precise control of electrical properties while managing structural complexity
Solution Approach 2:
The patent creates a composite structure by combining the doping layer with different dopant concentrations within the semiconductor layer. This composite approach integrates multiple functional regions (high-doped regions for source/drain contact and low-doped regions for channel control) into a single layered structure, improving device characteristics without proportionally increasing overall complexity
Data Source
AI summary
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate electrode on the semiconductor layer, a first insulating layer between the semiconductor layer and the gate electrode; a second insulating layer on the gate electrode, source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer, and a doping layer disposed along contact holes of the first and second insulating layers, which expose the both ends of the semiconductor layer, such as, between the both ends of the semiconductor layer and the source and drain electrodes.