Semiconductor Edge Cell Finger Integration for Density Gradient Compensation

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Solution Overview

Problem

Chemical mechanical polishing (CMP) processes in semiconductor manufacturing often result in pattern density gradients, leading to 'dishing' and improper function of semiconductor devices, necessitating the use of dummy cells to compensate, which increases device size without enhancing functionality.

Innovation Solution

A distributed layout style is implemented where fingers of adjacent cells are electrically connected to share the electrical impact of pattern density gradients, reducing the need for additional dummy cells and minimizing device size, while maintaining performance by distributing the gradient's effect across a greater number of inner cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If dummy cells are added around the exterior edge to compensate for pattern density gradients, then the pattern density uniformity is improved, but the device size increases

Engineering Contradiction:
Improvepattern density uniformityVSAvoiddevice size
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent merges edge cells with inner cells by establishing electrical connections between them, combining their functions to compensate for pattern density gradients. This eliminates the need for separate dummy cells, as the inner cells serve dual purposes: their original function plus compensating for edge effects through the electrical connection.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent makes inner cells multi-functional by having them perform both their original circuit function and the compensatory function for edge cells. Through electrical connections, inner cells universally serve multiple purposes, reducing the need for dedicated dummy cells and thereby minimizing device size while maintaining pattern density uniformity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Area of stationary object

If a distributed layout style with electrical connections between adjacent cells is implemented, then the device size is reduced, but the complexity of the layout design increases

Engineering Contradiction:
Improvedevice sizeVSAvoidlayout design complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent segments the electrical connection implementation into systematic groups, connecting edge cells with specific inner cells in an organized manner. This segmentation approach manages layout complexity by providing a structured method for creating electrical connections, rather than arbitrary or complex interconnections.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies electrical connections locally at the boundary between edge cells and inner cells, rather than throughout the entire device. This localized approach to creating distributed layouts reduces overall complexity by limiting the number of connections needed while still achieving the size reduction benefit.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20240193343A1System for designing a semiconductor device, device made, and method of using the system
Publication Date: 2024.06.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240193343A1 patent drawing
  • US20240193343A1 patent drawing
  • US20240193343A1 patent drawing

AI summary

A semiconductor device includes an edge active cell, an inner active cell and a middle active cell. The edge active cell is located near an edge of the semiconductor device. The edge active cell includes a plurality of fingers. The inner active cell is adjacent to the edge active cell toward a central portion of the semiconductor device. The inner active cell includes a plurality of fingers and at least one of the plurality of fingers of the edge active cell is electrically connected to at least one of the plurality of fingers of the inner active cell. The middle active cell is located near the central portion of the semiconductor device. The middle active cell includes a plurality of fingers and each of the fingers of the middle active cell is electrically connected to each other.