Semiconductor Substrate Edge Cleaning with Organic Acid
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Solution Overview
Problem
Current methods for manufacturing semiconductor substrates face challenges in effectively cleaning the periphery of substrates during the Edge Bead Removal (EBR) process, leading to contamination of tweezers and reduced yield rates due to inadequate edge cleaning, and the used cleaning liquids often suffer from drainage instability, causing unintended metal deposition.
Innovation Solution
A method involving the application of a composition for forming a resist underlayer film, which includes a metal compound and a solvent, followed by cleaning with a liquid containing an organic acid, ensuring excellent cleanability and drainage stability to efficiently remove metal hard masks and prevent contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal hard mask composition is used as a resist underlayer film, then the film can be effectively removed by EBR cleaning, but the cleaning liquid causes drainage instability and unintended metal deposition
Solution Approach 1:
The patent changes the chemical parameters of the cleaning liquid by specifying precise compositional ratios (propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether in 30:70 by mass) to optimize both cleaning effectiveness and drainage stability, preventing metal deposition while maintaining reliable film removal
Solution Approach 2:
The patent uses a composite cleaning liquid formulation combining two specific solvents in defined proportions, where the synergistic interaction between propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether achieves both effective metal hard mask removal and stable drainage properties
2Object-affected harmful factors
If the substrate edges are not cleaned by EBR, then the tweezers become contaminated, but the cleaning process causes metal deposition when drainage stability is poor
Solution Approach 1:
The patent optimizes the chemical composition parameters of the cleaning liquid to achieve the right balance between cleaning power and drainage stability, ensuring that the liquid effectively removes contaminants from substrate edges and tweezers while maintaining stable flow characteristics that prevent metal deposition
3Ease of operation
If a conventional cleaning liquid mixture is used, then it can clean resist films and organic underlayer films, but it fails to provide drainage stability
Solution Approach 1:
The patent precisely adjusts the compositional parameters of the cleaning liquid, specifying the mass ratio of propylene glycol monomethyl ether acetate (30 parts) to propylene glycol monoethyl ether (70 parts), to simultaneously achieve effective cleaning of various film types and stable drainage characteristics that prevent metal deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient manufacturing of high-quality semiconductor substrates by ensuring thorough edge cleaning and preventing contamination, while maintaining drainage stability, thus supporting the miniaturization of semiconductor devices.
Implementation Method 1
cleaning a periphery of the substrate with a cleaning liquid... The cleaning liquid includes an organic acid
Data Source
AI summary
A method for manufacturing a semiconductor substrate, includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; cleaning a periphery of the substrate with a cleaning liquid; and after cleaning the periphery, forming a resist pattern directly or indirectly on the resist underlayer film. The composition for forming a resist underlayer film includes: a metal compound; and a solvent. The cleaning liquid includes an organic acid.