Semiconductor Edge Etching with Tangential Jet Control
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Solution Overview
Problem
Existing methods for producing edge structures in semiconductor components are complex and lack reproducibility, making it difficult to achieve precise and stable electrical, mechanical, and geometric properties, especially in high-volume production, where fluctuations in the manufacturing process can affect the electrical properties of the components.
Innovation Solution
A method involving a chemical etchant jet applied tangentially to the edge surface of a rotating semiconductor body, allowing for precise control of the etching process by limiting the etchant jet's impact area and reducing the number of process steps, which enables the production of edge structures with high accuracy and reproducibility, such as double-positive edge bevels that recede into the semiconductor body, preserving main surfaces and enhancing stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional mechanical methods (grinding) are used to produce edge structures, then manufacturing precision can be achieved, but the process complexity increases and reproducibility decreases
Solution Approach 1:
The patent replaces mechanical grinding processes with a chemical etching process using a liquid etchant. The etchant is applied to the semiconductor wafer edge and chemically removes material to form the desired edge structure, eliminating the need for multiple mechanical grinding steps and associated precision tooling, thereby reducing process complexity while maintaining or improving manufacturing precision
Solution Approach 2:
The patent employs a liquid etchant delivery system that uses fluid dynamics to apply the etching solution to the semiconductor wafer edge. The etchant is pumped and delivered through a delivery system that controls flow rate and distribution, enabling precise chemical etching without complex mechanical positioning systems
2Manufacturing precision
If multiple work steps are used to manufacture edge terminations, then manufacturing precision can be maintained, but productivity decreases
Solution Approach 1:
The patent combines multiple separate work steps into a single integrated chemical etching process. Instead of performing multiple mechanical operations (grinding, polishing, masking) separately, the etchant simultaneously performs material removal, shaping, and surface treatment in one continuous process, thereby increasing productivity while maintaining precision through controlled chemical reactions
Solution Approach 2:
The patent implements a continuous etching process where the liquid etchant flows continuously over the semiconductor wafer edge during rotation, maintaining constant etching action without interruption. This continuous process eliminates idle times between discrete steps and enables high-volume production while maintaining consistent precision through steady-state chemical reactions
3Manufacturing precision
If conventional etching methods are used, then manufacturing precision can be achieved, but the number of process steps increases
Solution Approach 1:
The patent extracts and eliminates unnecessary intermediate process steps from conventional etching methods. By using a liquid etchant delivery system that directly applies etchant to the wafer edge during rotation, the process removes the need for separate masking, alignment, and multiple etching steps, reducing the total number of process steps while maintaining edge contour precision through direct chemical access
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient and cost-effective production of semiconductor components with stable electrical properties, reducing material usage and process steps, while maintaining high precision and reproducibility, even in large-scale production.
Implementation Method 1
etching a predetermined edge contour by applying a chemical etchant specifically to the edge surface by means of an etchant jet
Data Source
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AI summary
The invention relates to a method for producing an edge structure of a semiconductor device, comprising the steps of: providing a semiconductor body (1) having at least two spaced-apart main surfaces (3, 4) each with an edge (5, 6), between which edges (5, 6) an edge surface (7) extends, and etching a predetermined edge contour by selectively applying a chemical etchant to the edge surface (7) by means of an etchant jet (11) while simultaneously rotating the semiconductor body (1) about an axis of rotation (2). The etchant jet (11) is directed tangentially to the edge surface (7) with a predetermined beam cross-section (12) such that the etchant jet (11) only impacts the edge surface (7) with a portion of its beam cross-section (12). The invention further relates to a device (20, 30) for producing an edge structure of a semiconductor device.