A nonlinear saturable inductor and voltage selector combine turn-on, retrigger, and backporch functions to cut IGCT gate-unit loss, size, and cost.
A triac and series diode enable first-quadrant thyristor triggering with lower leakage current and no isolated power source.
Series vertical diodes and SiGe SCR regions enable earlier ESD triggering with lower capacitance and less RF degradation in integrated circuits.
A laterally spaced combo SCR gives 3DIC die-to-die interfaces a compact ESD discharge path that saves penalty area and avoids power bus taps.