Semiconductor Edge Seal Structure for TSV Moisture and Crack Protection
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Solution Overview
Problem
Existing semiconductor devices face reliability issues due to cracks and moisture propagation during dicing or singulation, which can lead to corrosion and compromised electrical connections at the bond pad, particularly where edge seals are incomplete or absent.
Innovation Solution
The implementation of a semiconductor device with a trench forming an edge seal around the through-silicon-via (TSV) and bond pad, filled with nitride material and encapsulant, which also includes a light block layer and tungsten grid to enhance reliability and prevent moisture ingress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a trench is formed entirely through the first semiconductor die and into the second semiconductor die to form an edge seal, then reliability is improved by preventing cracks and moisture propagation, but device complexity increases due to the additional structural layers and materials
Solution Approach 1:
The edge seal is segmented into multiple functional layers: a trench structure filled with nitride material, an encapsulant layer, and a light block layer. Each layer serves a specific protective function, collectively preventing cracks and moisture propagation while maintaining electrical isolation.
Solution Approach 2:
The edge seal employs composite material construction with nitride material filling the trench, encapsulant coating the sidewalls, and light block material providing optical isolation. This multi-material approach enhances overall reliability by addressing multiple failure modes simultaneously.
2Reliability
If the trench is filled with nitride material and encapsulant to prevent moisture ingress, then reliability is improved, but manufacturing precision requirements increase due to the need for precise trench formation and material deposition
Solution Approach 1:
The trench is formed through both semiconductor dies before filling with nitride material and encapsulant. This preliminary structural preparation ensures proper alignment and positioning, reducing the precision requirements for subsequent material deposition steps.
Solution Approach 2:
The nitride material serves as an intermediary substance filling the trench, providing a barrier that prevents moisture propagation. The encapsulant then coats the trench sidewalls, creating a secondary protective layer that further enhances moisture resistance.
3Reliability
If a light block layer and tungsten grid are added to the edge seal structure, then reliability is improved by preventing light interference and enhancing structural integrity, but device complexity increases
Solution Approach 1:
The edge seal structure is designed to perform multiple functions simultaneously: the light block layer prevents light interference with adjacent pixels, the tungsten grid provides structural reinforcement, and the nitride-encapsulant combination maintains electrical isolation and moisture protection. This multi-functional design enhances reliability without requiring separate structures for each function.
Data Source
AI summary
Implementations of a semiconductor device may include a first semiconductor die hybrid bonded to a second semiconductor die; a bond pad included in the second semiconductor die; a through-silicon-via (TSV) extending entirely through the first semiconductor die and to the bond pad included in the second semiconductor die; and a trench formed entirely through the first semiconductor die and to the bond pad included in the second semiconductor die. The trench may form an edge seal.