Semiconductor Edge Termination Structure for Miniaturization
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Solution Overview
Problem
Conventional reverse blocking IGBTs face challenges in miniaturization due to the increased length of the edge termination structure, which affects their size and efficiency, and lack a detailed construction for preventing depletion of the n− drift region, leading to suboptimal voltage blocking performance.
Innovation Solution
The semiconductor device incorporates a novel edge termination structure with conductive films extending towards the isolation and active regions, obstructing depletion layer expansion, thereby eliminating the need for an intermediate channel stopper and reducing the edge termination structure length, while maintaining superior bias blocking capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an intermediate channel stopper part is provided at the boundary between forward bias and reverse bias edge termination structures, then both forward and reverse bias blocking capabilities are ensured, but the edge termination structure length increases and device miniaturization is hindered
Solution Approach 1:
The invention extracts and eliminates the intermediate channel stopper part from the edge termination structure. By removing this component, the patent achieves device miniaturization while maintaining bias blocking capabilities through alternative field plate extensions that perform the necessary electrical functions without requiring the intermediate stopper structure.
Solution Approach 2:
The field plates are designed to extend into both the forward bias edge termination structure section and the reverse bias edge termination structure section, making them multi-functional. These extended field plates simultaneously provide voltage blocking and depletion layer control functions that were previously requiring separate dedicated structures, thereby eliminating the need for the intermediate channel stopper part.
2Length of moving object
If the edge termination structure length is reduced for miniaturization, then device size decreases, but voltage blocking performance and depletion layer control may be compromised
Solution Approach 1:
The invention extends field plates vertically into the depletion layer region rather than relying on horizontal intermediate structures. This dimensional change allows the field plates to control depletion layer expansion and provide voltage blocking through their extended position in the vertical dimension, achieving miniaturization without sacrificing performance.
Solution Approach 2:
The extended field plates act as intermediaries between the active region and the isolation region, mediating the electric field distribution and depletion layer control. By extending into both forward and reverse bias sections, these field plates provide continuous electrical control throughout the edge termination structure, maintaining voltage blocking performance in a compact design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the size of the semiconductor device while ensuring both forward and reverse bias blocking capabilities, enhancing voltage blocking performance and miniaturization potential.
Implementation Method 1
conductive films extending towards the isolation and active regions, obstructing depletion layer expansion
Data Source
AI summary
A semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure between an active region and an isolation region, the edge termination structure being composed of an edge termination structure for a forward bias section and an edge termination structure for a reverse bias section. A plurality of field limiting rings (FLRs) and a plurality of field plates (FPs) are provided in the edge termination structure for the forward bias section and the edge termination structure for the reverse bias section. A first forward FP that is the nearest of the plurality of FPs to the edge termination structure for the reverse bias section is formed to extend towards the isolation region side. A first reverse FP that is the nearest of the plurality of FPs to the edge termination structure for the forward bias section is formed to extend towards the active region side. The first reverse FP stops the depletion layer expanding from the active region on application of a forward voltage. The first forward FP stops the depletion layer expanding from the isolation region on application of a reverse voltage.