Semiconductor Light Emitting Device Electrode Angle Design
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Solution Overview
Problem
Semiconductor light emitting devices, such as LEDs and laser diodes, are prone to cracks due to stress applied during manufacturing, which affects their reliability and performance.
Innovation Solution
The design incorporates a semiconductor light emitting device structure with a first semiconductor layer having a cleavage plane, where the first elongated electrode extends at an angle between 3 degrees and 27 degrees relative to the cleavage plane, and a second elongated electrode extends at an angle between 88 degrees and 92 degrees, reducing stress concentration and crack formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrode alignment is used (parallel to cleavage plane), then manufacturing is simpler, but cracks occur due to stress concentration
Solution Approach 1:
The patent applies asymmetry by intentionally misaligning the elongated electrodes at specific angles (3-27 degrees) relative to the cleavage plane, rather than aligning them symmetrically parallel to it. This asymmetric configuration prevents stress concentration that would occur with parallel alignment, thereby suppressing crack formation while maintaining manufacturing feasibility through defined angular parameters.
2Reliability
If current density is concentrated in specific regions, then light extraction efficiency may improve, but stress concentration increases leading to cracks
Solution Approach 1:
The patent applies local quality by creating non-uniform current density distribution through the angled electrode configuration. The electrodes are positioned to concentrate current in specific local regions that optimize light extraction while the angular orientation ensures stress is distributed differently across the semiconductor layer, preventing crack formation. This localized optimization balances performance and reliability.
Data Source
AI summary
According to one embodiment, a semiconductor light emitting device includes an electrode layer, a first semiconductor layer, a first elongated electrode, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a crystal having a cleavage plane. The first semiconductor layer includes a first thin film portion and a thick film portion. The first thin film portion extends in a first direction perpendicular to a stacking direction from the electrode layer toward the first semiconductor layer. The first thin film portion has a first thickness. The thick film portion is arranged with the first thin film portion in a plane perpendicular to the stacking direction. An angle between the first direction and the cleavage plane is not less than 3 degrees and not more than 27 degrees. The first elongated electrode extends in the first direction in contact with the first thin film portion.