Semiconductor Electrode Opening Structure for Stable Interface States
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Solution Overview
Problem
Semiconductor devices with omitted barrier metal face instability due to uncontrolled energy levels at the silicon-insulating film interface and pn junction, leading to unstable characteristics, especially after high-temperature heat treatments.
Innovation Solution
A semiconductor device design that includes a metal electrode with an opening overlapped by a plated electrode, using the metal electrode as a plating material, which stabilizes the interface states and adjusts the threshold voltage by controlling hydrogen supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If barrier metal is omitted from the electrode to simplify the structure, then device complexity is reduced, but metal diffusion control is lost leading to unstable characteristics
Solution Approach 1:
The patent introduces an intermediary substance (organic compound layer) between the metal electrode and the semiconductor substrate to prevent metal diffusion. This intermediary layer serves as a barrier that eliminates the need for traditional barrier metal while maintaining diffusion control, thus resolving the contradiction between simplified structure and reliable operation.
Solution Approach 2:
The patent changes the approach from using inorganic barrier metal to using an organic compound layer with specific molecular characteristics. By changing the material parameter from metal to organic compound, the electrode structure is simplified while diffusion control is maintained through the organic layer's inherent properties.
2Temperature
If high-temperature heat treatment is applied to improve semiconductor properties, then material characteristics are enhanced, but metal diffusion increases causing unstable device characteristics
Solution Approach 1:
The organic compound layer acts as a protective intermediary that allows high-temperature heat treatment to proceed without causing metal diffusion. The organic layer remains stable at elevated temperatures while blocking metal atoms, enabling the benefits of high-temperature processing without the harmful side effects.
Solution Approach 2:
The organic compound layer is applied beforehand as a protective cushion against metal diffusion during subsequent high-temperature heat treatment processes. This pre-established barrier prevents the harmful interaction between metal and semiconductor substrate even when exposed to high temperatures.
3Quantity of substance
If barrier metal thickness is reduced to minimize material usage, then material consumption is decreased, but diffusion prevention capability is insufficient leading to characteristic instability
Solution Approach 1:
The patent changes the material type from inorganic metal to organic compound, which provides effective diffusion barrier properties with much thinner layer thickness. This parameter change allows sufficient diffusion prevention with minimal material consumption, resolving the contradiction between material quantity and reliability.
Solution Approach 2:
The organic compound layer serves as a thin, consumable barrier layer that effectively prevents diffusion without requiring the thickness and material quantity of traditional barrier metals. The organic layer is applied in minimal amounts but provides adequate protection for device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Stabilizes the semiconductor device characteristics by terminating dangling bonds and adjusting the threshold voltage, ensuring reliable operation.
Implementation Method 1
A semiconductor device design that includes a metal electrode with an opening overlapped by a plated electrode, using the metal electrode as a plating material, which stabilizes the interface states and adjusts the threshold voltage by controlling hydrogen supply
Data Source
AI summary
To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.