Semiconductor Electrode Segmentation for Bonding Damage

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Solution Overview

Problem

Copper wires, due to their hardness, can cause bonding damage to semiconductor chips and lead to reliability issues such as delamination and moisture penetration, affecting the performance and longevity of semiconductor devices.

Innovation Solution

The implementation of a semiconductor device design that includes a semiconductor part, first and second electrodes, and protective films, where the second electrode is made of copper and partially covers the first protective film, and a second protective film is added to cover the first protective film and the outer edge of the second electrode, enhancing moisture resistance and preventing delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If copper wire is used for mounting, then electrical resistance is reduced, but bonding damage occurs due to hardness

Engineering Contradiction:

Improveelectrical resistanceVSAvoidbonding damage

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent divides the electrode structure into multiple segments: a first electrode made of soft material (aluminum) directly contacting the semiconductor chip, and a second electrode made of copper wire mounted on the first electrode. This segmentation allows each electrode to perform its optimal function - the aluminum provides gentle bonding to avoid chip damage, while the copper provides low electrical resistance for the wire connection.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first electrode acts as an intermediary between the semiconductor chip and the copper wire. It transfers the bonding force from the chip to the wire while protecting the chip from direct contact with the hard copper wire, thus preventing bonding damage while enabling low-resistance connection.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Use of energy by moving object

If copper wire is used for mounting, then electrical resistance is reduced, but delamination occurs

Engineering Contradiction:

Improveelectrical resistanceVSAvoiddelamination

Core Design Contradiction:

Use of energy by moving objectVSStability of the object's composition

Solution Approach 1:

The patent introduces a protective film that segments and isolates the interface between the copper wire and the semiconductor chip. This protective film prevents direct interaction between the hard copper wire and the chip structure, thereby preventing delamination while maintaining the low electrical resistance benefit of copper wiring.

Inventive Principle:

Principle #1Segmentation

3Use of energy by moving object

If copper wire is used for mounting, then electrical resistance is reduced, but moisture penetration occurs

Engineering Contradiction:

Improveelectrical resistanceVSAvoidmoisture penetration

Core Design Contradiction:

Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The protective film serves as an intermediary barrier between the copper wire electrode and the external environment. It prevents moisture from penetrating to the electrode-chip interface while allowing the copper wire to maintain its low electrical resistance function, thus resolving the contradiction between electrical performance and environmental protection.

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS20230078259A1Semiconductor device

Publication Date: 2023.03.16 KK TOSHIBA

AI summary

A semiconductor device includes a semiconductor part, first and second electrodes, and first and second protective films. The first electrode is provided on the semiconductor part. The first protective film is provided on the semiconductor part and covers an outer edge of the first electrode. The second electrode is provided on the first electrode. The second electrode includes an outer edge partially covering the first protective film. The second protective film is provided on the semiconductor part and covers the first protective film and the outer edge of the second electrode.