Semiconductor/Solid-State Device Details TRIZ Cases

A semiconductor device uses a bent main terminal to connect directly to a cooler.

Lateral recesses in control gate grooves enable conductive film deposition and precise mask etching for split-gate structures.

A semiconductor package structure uses a connecting layer with bumps and bonding wires to electrically connect dies on a substrate.

A p+ polycrystalline silicon layer forms through aluminum species diffusion during thermal processing.

Extracting temporary electroplating lines after fabrication prevents cross-talk and signal distortion while maintaining reliable electrical connections.

Rounding molding compound edges enables a conformal shielding layer to eliminate crevices and prevent electromagnetic interference leakage.

A heat dissipation element with a thermal conductive layer contacts an embedded chip side wall to prevent overheating and reduce electromagnetic interference.

A thermal conductive unit transfers heat from a chip through vertical conduction pathways.

A radiation absorption control layer manages radiant energy during semiconductor alloying.

Forming the rear redistribution layer on a carrier substrate before chip mounting reduces yield loss and manufacturing costs for fan-out packages.

A semiconductor data transmission apparatus uses a strobe signal and reference signal to sense logic levels on single-ended lines.

Temperature-dependent metallization segments direct heat flux toward or away from a target region based on operating conditions.

Composite conductive materials lower resistance in sub-25nm power rails, mitigating electromigration and improving electrical performance.

A stress compensating encapsulant with matched CTE reduces thermal expansion mismatch in large array WLCSP packages.

Laser ablation creates narrow division grooves in resin package substrates, trapping filler particles that risk falling during subsequent processing steps.

A semiconductor package spacer maintains fixed separation between substrates, preventing encapsulant voids in miniaturized logic die assemblies.

A bolometer uses a silicon via filled with conductive material to electrically connect the thermal radiation measurement element on one substrate to the readout circuit on another.

Stacked wiring layers route signals vertically to prevent wire intersections and simplify layout complexity.

An embedded shield blocks electromagnetic radiation to prevent thermal laser attacks on encryption keys stored in battery-backed random access memory.

Dilute hydrochloric acid removes natural oxide films from nickel layers to enhance gold adhesion on semiconductor electrodes.

An offset semiconductor die pad array creates unobstructed escape routing paths, reducing required layers and resolving large pitch limitations.

Segmented electrodes with protective films prevent delamination and moisture penetration while maintaining low electrical resistance.

Stacked copper and gold bumps shield the under bump metallurgy sidewalls to prevent undercut defects and improve bonding reliability.

Segmenting the contact plug into two layers improves bottom profile control and decreases parasitic capacitance.

Coupling a metal lid to die metalized areas creates a Faraday shield that blocks electromagnetic interference while lowering manufacturing costs.

Integrated conductive body short-circuits electrodes to prevent static damage without external components.

A guiding projection on the cover portion contacts sealing material to delay its rise, preventing contamination at the terminal opening.

Redistribution conductive paths route signals from remote chip contacts to edge terminals, eliminating long stubs that cause signal reflection and radiation.

Reinforcing metal layer straddles electrode pad boundaries to distribute thermal stress and prevent printed wiring substrate cracks.

Multi-layer carrier substrates with adjustable thermal expansion coefficients reduce warpage and stress in semiconductor packages.

Lateral connection of adjacent interconnect structures via a resistive layer eliminates vertical vias, reducing device complexity and substrate area.

A hydrogen blocking layer shields memory cells from thermal damage while a supply layer passivates transistor interfaces.

A connectable package extender attaches to a semiconductor device via interlocking surface features to provide thermal management.

Staggered chip stack uses metal pillars to eliminate costly TSV drilling.

Reflowing solder balls creates conductive channels in a hybrid interconnect, increasing circuit density without requiring expensive through-substrate vias.

A QFP package design uses an exposed die pad and hybrid leads to maximize I/O count.

A silicon nitride circuit board uses a sealing resin portion to manage residual stress through optimized material properties.

System derives optimal heating parameters by measuring transient state viscosity, eliminating trial and error for diverse member combinations.

A solid-state imaging chip connects to a flexible board via an end-face electrode aligned with the device pad.

Segmented word lines prevent punch-through in 3D NAND by maintaining blockage margins while increasing integration levels.

A semiconductor package uses an extended heat spreading structure to dissipate thermal energy from electronic components.

Copper plating on the spacer improves wettability with joining material, preventing intermetallic compound formation that exhausts the thin metal layer.

A dual-sided integrated fan-out package architecture increases I/O pad density through direct redistribution layer formation.

Segmented overlay marks with redundant pattern elements maintain alignment accuracy despite erosion from etching or ion implant processes.

A packaging substrate design enables side plating on grid array packages through segmented connecting members.

An etching composition removes impurities from under-bump metallurgy layers using hydrogen peroxide and chelating agents.