Semiconductor Package Structure Eliminating TSV Process
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Solution Overview
Problem
Wide I/O memory devices require a large number of vias due to their many pins, leading to high costs associated with the Through-Silicon Via (TSV) process for data access, which is expensive and inefficient.
Innovation Solution
A package structure that eliminates the need for the TSV process by using a substrate with conductive units, a first die on one surface, a connecting layer with bumps for electrical connection between dies, and bonding wires to connect the dies to the substrate or conductive units, allowing for electrical connectivity without the TSV process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the TSV process is used to create vias for electrical connection in wide I/O memory devices, then electrical connectivity between dies and substrate is achieved, but manufacturing cost increases significantly
Solution Approach 1:
The patent extracts and eliminates the TSV process from the manufacturing flow by replacing it with an alternative interconnection approach using bonding wires and conductive units on the substrate, thereby removing the source of high manufacturing costs while preserving electrical connectivity functionality
Solution Approach 2:
The patent employs cost-effective bonding wires and simple conductive units as temporary or alternative interconnection structures that achieve the same electrical connectivity function as expensive TSVs, using inexpensive materials and processes to replace costly manufacturing steps
2Productivity
If a large number of vias are created to support many pins in wide I/O memory devices, then data access capability is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent segments the interconnection function into separate components: bonding wires for electrical connection and conductive units for substrate interaction, eliminating the need for complex through-silicon via structures while maintaining the capability to support multiple data access channels
Solution Approach 2:
The patent transitions from three-dimensional TSV structures (through the silicon substrate) to a two-dimensional surface-level interconnection approach using bonding wires and conductive units, simplifying the manufacturing process while maintaining electrical connectivity for wide I/O operations
Data Source
AI summary
A package structure comprising: a substrate, having at least one conductive units provided at a first surface of the substrate; at least one first die, provided on a second surface of the substrate; a connecting layer, provided on the first die; a second die, provided on the connecting layer, wherein the connecting layer comprises at least one bump for connecting the first die; and at least one bonding wire. The connecting layer has a first touch side and a second touch side, the first touch side contacts a first surface of the first die and the second touch side contacts a second surface of the second die, an area of the first touch side is smaller than which for the first surface of the first die, and a size of the first die equals to which of the second die.