Semiconductor Device Reinforcing Metal Layer Thermal Stress
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Solution Overview
Problem
Semiconductor devices face damage due to thermal stress applied to electrode terminals, which can lead to cracks in the printed wiring substrate, particularly at the boundary lines between the electrode terminals and pads, causing structural integrity issues.
Innovation Solution
A semiconductor device configuration that includes a reinforcing metal layer on the electrode pad, straddling the boundary line between the electrode terminal and pad, which helps distribute thermal stress and reduce its impact on the substrate, thereby minimizing crack formation and maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrode terminals are mounted on the printed wiring substrate, then electrical connection is achieved, but thermal stress causes cracks at the boundary lines between electrode terminals and pads
Solution Approach 1:
The patent applies a reinforcing metal layer specifically at the boundary lines between electrode terminals and pads, rather than uniformly across the entire substrate. This localized reinforcement addresses the specific stress concentration points where cracks occur, improving reliability without adding unnecessary weight or complexity elsewhere in the structure.
Solution Approach 2:
The patent uses a composite structure combining the printed wiring substrate with a reinforcing metal layer (such as copper or aluminum) at critical boundary regions. This composite approach leverages the electrical properties of the substrate while adding the mechanical strength of the metal layer to resist thermal stress and prevent cracking.
2Strength
If a reinforcing metal layer is applied to strengthen electrode terminals, then resistance to thermal stress improves, but manufacturing complexity increases
Solution Approach 1:
The reinforcing metal layer is segmented to be applied only at the specific boundary lines between electrode terminals and pads, rather than as a continuous layer. This segmentation reduces the amount of material required and simplifies the manufacturing process while still providing effective reinforcement at the critical stress points.
Solution Approach 2:
The reinforcing metal layer is applied locally only where thermal stress concentration occurs (at the boundary lines), rather than uniformly across the entire electrode terminal area. This localized application reduces manufacturing complexity and material costs while maintaining adequate strength where it is most needed.
Data Source
AI summary
A semiconductor device includes: a printed wiring substrate; a semiconductor chip mounted on a first surface of the printed wiring substrate; a sealing resin sealing the semiconductor chip on the first surface of the printed wiring substrate; an electrode pad provided on a second surface on a side opposite to the first surface of the printed wiring substrate; an electrode terminal connected to the electrode pad and protruding from the second surface; and a metal layer provided on a surface of the electrode pad on the electrode terminal side or on the side opposite to the electrode terminal so as to straddle a boundary line of the bonding surface between the electrode terminal and the electrode pad which is at least a boundary line on a side facing an outside of a mounting region of the semiconductor chip.