Semiconductor Light-Emitting Electrode Layout for Wire Bonding Stability
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Solution Overview
Problem
Conventional semiconductor light-emitting devices face issues with light emission efficiency due to enlarged contact areas blocking light and structural weaknesses in the connection structure, particularly during wire bonding, where voids in the metallic material can lead to electrode instability and damage.
Innovation Solution
The semiconductor light-emitting device features a substrate with a connection structure including an insulating layer and electrically connecting layers, where the second electrode's projection covers a portion of the insulating layer, providing support and reducing the likelihood of damage during wire bonding by distributing the force exerted by the wire bonding electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the contact area between electrodes and semiconductor light-emitting unit is enlarged to achieve good current spreading effect, then current spreading is improved, but the effective area of light-emitting surface is reduced due to light being partially blocked by electrodes
Solution Approach 1:
The patent transitions from a planar contact arrangement to a three-dimensional configuration by forming recesses in the semiconductor light-emitting unit. The electrodes are positioned in these recesses, allowing current spreading to occur in the vertical dimension while keeping the horizontal light-emitting surface area maximized. This dimensional change resolves the contradiction by enabling both good current spreading and large light-emitting area simultaneously.
2Reliability
If a through hole is formed in the insulating layer to electrically connect the second electrode to the second type semiconductor layer, then electrical connection is achieved, but the extending part of the second electrically connecting layer is vulnerable to void formation reducing structural strength
Solution Approach 1:
The patent applies preliminary protective action by forming the insulating layer to cover and support the extending part of the second electrically connecting layer before wire bonding is performed. This insulating layer acts as a protective barrier that prevents void formation and provides mechanical support during the wire bonding process, thereby maintaining structural strength while achieving reliable electrical connection.
Solution Approach 2:
The insulating layer serves as a cushioning element that absorbs and distributes mechanical stress during wire bonding. By positioning the insulating layer to cover the extending part of the second electrically connecting layer, the patent provides beforehand cushioning that prevents damage from wire bonding forces, thus maintaining both electrical connection reliability and structural strength.
3Reliability
If the second electrically connecting layer extends through a through hole to electrically contact the second type semiconductor layer, then electrical connection is established, but the electrode is susceptible to damage during wire bonding due to voids in the metallic material
Solution Approach 1:
The insulating layer acts as an intermediary element between the second electrode and the extending part of the second electrically connecting layer. This intermediary structure provides mechanical support and distributes wire bonding forces, preventing direct stress concentration on the vulnerable extending part. The insulating layer mediates the interaction between the electrode and external forces, thereby maintaining electrical connection reliability while protecting against damage during wire bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the structural integrity and light-emitting efficiency by minimizing electrode damage and void formation, allowing for stable operation under high current conditions while maintaining effective light emission.
Implementation Method 1
The second electrically connecting layer includes an extending part that extends through the at least one through hole to electrically connect the second electrode to the second type semiconductor layer
Implementation Method 2
a projection of the second electrode on the insulating layer covers a portion of the insulating layer, providing support and reducing the likelihood of damage during wire bonding by distributing the force exerted by the wire bonding electrode
Data Source
AI summary
A semiconductor light-emitting device includes a substrate, a connection structure disposed on the substrate, a semiconductor light-emitting unit disposed on the connection structure, and first and second electrodes. The connection structure includes an insulating layer formed with a through hole, a first electrically connecting layer disposed on the insulating layer and electrically connected to the first electrode, and a second electrically connecting layer disposed between the substrate and the insulating layer and extending through the through hole to be electrically connected to the second electrode. A projection of the second electrode on the insulating layer covers a portion of the insulating layer.