Semiconductor Package End Insulation for Stacked Heat Isolation
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Solution Overview
Problem
Conventional thermal management techniques for semiconductor devices often inadequately manage heat, leading to increased temperatures in adjacent components, potential damage, and performance degradation.
Innovation Solution
The use of thermally insulating materials strategically positioned to cover the ends of semiconductor devices, specifically a thermally insulating material with low thermal conductivity, is employed to resist heat flow from heat-generating regions to adjacent devices, thereby maintaining component temperatures within safe operational ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thermally conductive materials are used to manage heat from high-power semiconductor devices, then heat is effectively conducted away from the heat-generating region, but heat flows to adjacent stacked semiconductor devices causing temperature increase and potential damage
Solution Approach 1:
The patent applies local quality by using different thermal conductivity materials in different spatial locations within the same package. Specifically, thermally conductive materials (e.g., metal traces, heat spreaders) are positioned to conduct heat away from the high-power device, while thermally insulating materials (e.g., polymer underfill, air gaps) are strategically placed between the high-power device and adjacent low-power devices. This spatial differentiation of thermal properties allows effective heat management without causing thermal damage to neighboring components.
2Quantity of substance
If semiconductor devices are stacked in close proximity to increase integration density, then space utilization is improved, but thermal management becomes inadequate leading to performance degradation and reliability issues
Solution Approach 1:
The patent applies segmentation by dividing the thermal management system into distinct functional zones: heat generation zones (high-power devices), heat conduction pathways (thermally conductive materials), heat isolation barriers (thermally insulating materials), and heat dissipation zones (heat sinks, PCB traces). This segmented approach allows each stacked device to have its thermal environment independently controlled, enabling high integration density while maintaining reliability through targeted thermal management at each segment.
Solution Approach 2:
The patent uses thermally insulating materials as intermediary barriers between high-power heat-generating devices and adjacent heat-sensitive devices. These intermediary materials (such as polymer underfill compounds or air gap structures) are positioned at critical thermal interfaces to block harmful heat transfer while allowing electrical and mechanical connections to function normally. This mediator approach enables close stacking without compromising the thermal reliability of individual devices.
3Ease of manufacture
If conventional thermal management techniques are used without selective insulation, then manufacturing is simpler, but heat flows through undesired paths causing temperature increase in sensitive components
Solution Approach 1:
The patent applies preliminary action by pre-positioning thermally insulating materials during the packaging assembly process, specifically placing insulation barriers between devices before final bonding and encapsulation. This preliminary placement of thermal management features allows standard manufacturing processes to be used while ensuring that heat flow paths are predetermined and controlled, preventing thermal damage to sensitive components without requiring complex post-assembly modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the operating temperature of adjacent semiconductor devices, preventing damage and ensuring they operate below maximum recommended temperatures, while allowing heat to be directed out of the package without passing through these devices, thus maintaining component integrity.
Implementation Method 1
a second semiconductor device stacked on the first semiconductor device... at least one thermally insulating material at least partially covering an end of the second semiconductor device... to resist heat flow from the first semiconductor device to the second semiconductor device
Data Source
AI summary
Semiconductor device packages comprise a first semiconductor device comprising a heat-generating region located on at least one end thereof. A second semiconductor device is attached to the first semiconductor device. At least a portion of the heat-generating region extends laterally beyond at least one corresponding end of the second semiconductor device. A thermally insulating material at least partially covers the end of the second semiconductor device. Methods of forming a semiconductor device packages comprise attaching a second semiconductor device to a first semiconductor device. The first semiconductor device comprises a heat-generating region at an end thereof. At least a portion of the heat-generating region extends laterally beyond an end of the second semiconductor device. The end of the second semiconductor device is at least partially covered with a thermally insulating material.