Semiconductor Device With Bidirectional ESD Protection Diode Network
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing protective diodes for semiconductor devices are costly and inefficient in protecting against electrostatic discharge (ESD) while maintaining low capacitance and high breakdown voltage.
Innovation Solution
A semiconductor device design featuring a network of diodes with specific connectivity and epitaxial layers that create bidirectional current paths with low capacitance and controlled breakdown voltage, allowing for effective ESD protection with reduced production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional protective diodes are used for ESD protection, then ESD protection function is provided, but production cost increases and capacitance is not sufficiently reduced
Solution Approach 1:
The patent combines multiple diodes (first diode with cathode to first terminal, second diode with cathode to second terminal, third diode with anode to first terminal, fourth diode with anode to second terminal, and fifth diode connecting the anodes and cathodes) into a single integrated protective circuit structure. This merging of multiple protective elements into one unified device reduces the number of separate components needed, thereby lowering production cost while maintaining comprehensive ESD protection capability across multiple terminals.
Solution Approach 2:
The protective circuit provides multi-functional ESD protection by handling both polarities of electrostatic discharge through its bidirectional diode configuration. The circuit can protect against positive ESD events (current flowing from first terminal to second terminal) and negative ESD events (current flowing from second terminal to first terminal), making it a universal protective solution that replaces multiple single-function protective devices, thus reducing overall system cost and complexity.
2Reliability
If conventional protective diodes are used, then ESD protection is provided, but capacitance remains high reducing protection efficiency
Solution Approach 1:
The patent applies local quality by configuring each diode with specific connectivity patterns tailored to its protective function. The first and second diodes are configured with cathodes connected to respective terminals for reverse-biased protection, while the third and fourth diodes provide forward-biased protection paths. The fifth diode strategically connects the anodes and cathodes to enable bidirectional protection. This localized optimization of each diode's configuration minimizes overall capacitance while ensuring comprehensive ESD protection at each terminal.
3Ease of manufacture
If simpler protective structures are used, then production cost decreases, but breakdown voltage control and protection effectiveness deteriorate
Solution Approach 1:
The protective circuit employs dynamic voltage distribution through its multi-diode configuration. Under normal operating conditions, the diodes remain in their respective bias states (forward or reverse) maintaining low leakage current. When ESD events occur, the circuit dynamically switches protection paths: for positive ESD, current flows through the third diode and fifth diode; for negative ESD, current flows through the fourth diode and fifth diode. This dynamic response ensures precise breakdown voltage control adapted to different ESD scenarios while maintaining a relatively simple and cost-effective structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device provides bidirectional ESD protection with low capacitance and high efficiency, enabling cost-effective and compact integration while minimizing dynamic resistance and production complexity.
Implementation Method 1
a first diode having a cathode connected to a first terminal, a second diode having a cathode connected to a second terminal and an anode connected to an anode of the first diode, a third diode having an anode connected to the first terminal and the cathode of the first diode, a fourth diode having an anode connected to the second terminal and the anode of the second diode and a cathode connected to a cathode of the third diode
Implementation Method 2
A breakdown voltage of the fifth diode is lower than a breakdown voltage of each of the first diode, the second diode, the third diode, and the fourth diode
Data Source
AI summary
A semiconductor device includes a first diode having a cathode connected to a first terminal, a second diode having a cathode connected to a second terminal and an anode connected to an anode of the first diode, a third diode having an anode connected to the first terminal and the cathode of the first diode, a fourth diode having an anode connected to the second terminal and the anode of the second diode and a cathode connected to a cathode of the third diode, and a fifth diode having an anode connected to the anode of the first diode and the anode of the second diode and a cathode connected to the cathode of the third diode and the fourth diode. A breakdown voltage of the fifth diode is lower than the breakdown voltages of the first diode, the second diode, the third diode, and the fourth diode.