Dual-Sided Semiconductor Failure Analysis With Overlapping Irradiation

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Solution Overview

Problem

Existing semiconductor failure analysis devices struggle to reliably detect failure portions in semiconductor devices due to incomplete overlap of irradiation regions, leading to insufficient light stimulus and missed failure detection.

Innovation Solution

A semiconductor failure analysis device and method that irradiate the semiconductor device from both main surfaces with differently sized irradiation regions, ensuring complete overlap and reliable light stimulus by controlling the emission of first and second irradiation light using optical scanning units and lenses with varying magnifications and dispositions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If irradiation regions from both main surfaces are made to overlap completely, then detection reliability is improved, but device complexity increases due to need for precise control of differently sized irradiation regions

Engineering Contradiction:
Improvefailure detection reliabilityVSAvoidcontrol system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by intentionally making the first irradiation region and second irradiation region different in size. The control unit is configured to maintain complete overlap between these asymmetrically sized regions during scanning, which improves failure detection reliability while the control system manages the complexity through coordinated motion control.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent implements dynamics by enabling the irradiation regions to move along predetermined paths while maintaining their overlap relationship. The control unit dynamically adjusts the positions of both irradiation regions during scanning operations, allowing the system to adapt to different inspection scenarios while preserving the complete overlap condition for reliable failure detection.

Inventive Principle:
Principle #15Dynamics

2Reliability

If differently sized irradiation regions are used from both surfaces, then comprehensive light stimulus is achieved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvelight stimulus completenessVSAvoidirradiation region alignment precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent employs asymmetry by using irradiation regions of different sizes from the first and second main surfaces. This asymmetric configuration enables comprehensive light stimulus coverage while the control unit ensures precise alignment and complete overlap, balancing the benefits of asymmetric illumination with the requirements for manufacturing precision.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The control unit implements feedback control to maintain complete overlap between the first and second irradiation regions during scanning. By continuously monitoring and adjusting the positions of both irradiation regions, the system achieves comprehensive light stimulus while compensating for any deviations, thereby reducing the impact of manufacturing precision limitations.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for comprehensive visualization of failure portions by ensuring thorough light stimulus from both sides of the semiconductor, enhancing the detection accuracy of failure analysis.

Implementation Method 1

Since electron-hole pairs are generated inside a semiconductor due to the irradiation of the laser beam, a current flows through the wiring of the semiconductor integrated circuit

Methodology Applied
Scientific EffectElectron-hole pair generation: Photoelectric Effect

Data Source

PatentUS12510591B2Semiconductor failure analysis device and semiconductor failure analysis method
Publication Date: 2025.12.30 HAMAMATSU PHOTONICS KK
  • US12510591B2 patent drawing
  • US12510591B2 patent drawing
  • US12510591B2 patent drawing

AI summary

A semiconductor failure analysis device includes a first analysis unit that emits first irradiation light along a first path set on a first main surface of a semiconductor device, a second analysis unit that emits second irradiation light along a second path set on a second main surface that is a back side of the first main surface, an electric signal acquisition unit that receives an electric signal output from the semiconductor device irradiated with the first irradiation light and the second irradiation light, and a computer that controls the second analysis unit. A size of a first irradiation region is different from a size of a second irradiation region. The computer emits the first irradiation light and the second irradiation light while a state where the entire second irradiation region overlaps the first irradiation region is maintained.