Selective attenuation protects ADCs from RF power spikes while preserving critical signal portions for accurate measurement.
Timed dual laser pulses generate sequential electron pulses to reveal partial disconnections without slowing semiconductor inspection.
Photoluminescence from aligned defect sensor sites measures circuit charge density with lower noise and thermal impact in compact circuits.
On-chip voltage comparison enables contactless IO driver testing without probe-pad capacitance, preserving high-speed chip performance.
A multi-step effective medium model separates CMOS interference from memory array signals to improve CuA optical metrology accuracy.
Dual-surface light scanning keeps a smaller irradiation region fully overlapped to improve semiconductor failure detection accuracy.
DC BIST biases the photodiode electrically to verify IC connectivity before optical assembly, cutting test cost and component waste.
Electric-field-driven ions enable contactless electron beam testing of packaging substrates to detect shorts, opens, and leakages reliably.