Semiconductor Gate End Curvature for Short-Circuit Isolation
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Solution Overview
Problem
As semiconductor devices shrink, the distance between gate pattern structures decreases, leading to potential device failures due to convex rounding of end portions and increased risk of short circuits, as well as patterning defects where gate pattern structures fail to separate properly.
Innovation Solution
The design incorporates concavely curved end portions of gate pattern structures and gate isolation regions in a rounded hole configuration to maintain separation and prevent short circuits, while ensuring minimal distance between side surfaces of the gate pattern structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the distance between gate pattern structures is decreased to increase storage capacity, then data storage density is improved, but the risk of short circuits and patterning defects increases
Solution Approach 1:
The end portions of the gate pattern structures are formed with a concave curved shape instead of a straight or convex configuration. This curvature creates a rounded hole configuration that maintains adequate separation distance between adjacent gate structures, preventing short circuits while allowing closer spacing to increase storage capacity.
Solution Approach 2:
The gate pattern structure has different geometries at different locations: the central portion maintains a standard configuration for optimal electrical performance, while the end portions are specifically modified with concave curvature to prevent short circuits. This local differentiation allows the structure to simultaneously achieve high density and high reliability.
2Area of stationary object
If the gate pattern structures are placed closer together, then area utilization is improved, but patterning defects occur where structures fail to separate
Solution Approach 1:
The concave curved end portions create a rounded hole configuration that facilitates proper separation of adjacent gate structures during the patterning process. The curved geometry prevents the structures from merging or failing to separate, ensuring manufacturing precision even at high area utilization.
3Ease of manufacture
If convex rounded end portions are used in gate pattern structures, then manufacturing is simplified, but short circuits occur between adjacent structures
Solution Approach 1:
Instead of using convex rounded end portions that protrude toward adjacent structures and cause short circuits, the invention inverts the curvature to create concave end portions that recede from adjacent structures. This inversion maintains manufacturing simplicity while ensuring adequate electrical isolation and preventing short circuits.
Data Source
AI summary
A semiconductor device and a data storage system, the device including a lower structure; and an upper structure on the lower structure and including a memory cell array, wherein the lower structure includes a semiconductor substrate, first and second active regions spaced apart from each other in a first direction on the semiconductor substrate, the first and second active regions being defined by an isolation insulating layer on the semiconductor substrate, and first and second gate pattern structures extending in the first direction to cross the first and second active regions, respectively, on the semiconductor substrate, the first gate pattern structure and the second gate pattern structure have first and second end portions spaced apart from each other in a facing manner in the first direction, respectively, and the first and second end portions are concavely curved in opposite directions away from each other in a plan view.