Semiconductor Device Gate Electrode Density Variation
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Solution Overview
Problem
Semiconductor devices, such as MOSFETs and IGBTs, face failure due to current concentration and heat dissipation issues, leading to increased electrical resistance and potential thermal runaway in specific regions, which can cause device failure.
Innovation Solution
The semiconductor device design includes a first and second metal member configuration with distinct semiconductor regions and gate electrode arrangements, where the second portion has a longer n−-type semiconductor region and fewer gate electrodes per unit area, reducing current concentration and increasing electrical resistance, thereby enhancing the safe operating area and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the semiconductor region length and gate electrode density are increased to improve current carrying capacity, then the device can handle higher current, but current concentration and heat dissipation issues arise leading to increased electrical resistance and potential thermal runaway
Solution Approach 1:
The patent applies local quality by creating two distinct portions in the semiconductor device: a first portion with a first length of semiconductor region and gate electrode density, and a second portion with a second length greater than the first length and reduced gate electrode density. This spatial variation in structure allows different regions to have optimized properties - the first portion handles current efficiently while the second portion with lower density reduces current concentration and improves heat dissipation, thereby resolving the contradiction between current carrying capacity and reliability.
2Productivity
If gate electrodes are densely packed to increase device functionality, then more current paths are available, but heat dissipation becomes problematic and electrical resistance increases in specific regions
Solution Approach 1:
The patent segments the semiconductor device into two distinct portions along the first direction. The first portion contains densely packed gate electrodes for high functionality, while the second portion has reduced gate electrode density for improved heat dissipation. This segmentation allows the device to simultaneously achieve high productivity in the first portion and effective temperature management in the second portion, resolving the contradiction between device functionality and heat dissipation.
3Reliability
If the semiconductor region length is increased to reduce electrical resistance, then current flow improves, but the device becomes more susceptible to current concentration and thermal runaway
Solution Approach 1:
The patent uses local quality by varying the semiconductor region length and gate electrode density across different portions of the device. The first portion has a first length optimized for low electrical resistance, while the second portion has a second length greater than the first but with reduced gate electrode density. This local differentiation allows each portion to address different concerns - the first portion minimizes resistance while the second portion prevents current concentration and thermal runaway, thereby resolving the contradiction.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first and second metal members, and a semiconductor element. The first metal member is electrically connected to a first terminal. The semiconductor element includes first and second electrodes, first to third semiconductor regions, and a gate electrode. The second metal member is provided on the second electrode, and electrically connected to the second electrode and a second terminal. The semiconductor element includes a first portion that overlaps the second metal member in the first direction, and a second portion that does not overlap the second metal member in the first direction. A length in the second direction of the first semiconductor region between an adjacent pair of the gate electrodes is greater than a length in the second direction of the first semiconductor region between an adjacent pair of the gate electrodes.