Semiconductor/Solid-State Device Details TRIZ Cases

A fan-out semiconductor package places processor and memory chips within interconnection member through-holes, utilizing redistribution layers for electrical connectivity.

A semiconductor insulating film with controlled compressive stress and thickness manages thermal loads.

Composite dielectric structures with organic layers and inorganic supports form air gaps that lower RC delay while maintaining mechanical strength.

Segmented heat sinks manage localized heat buildup in miniaturized packages, improving thermal performance by 17 percent.

A metal layer within the encapsulation region diffuses heat from electronic components.

Screen printing and firing conductive pastes with plasma-treated surfaces to achieve fine pitch interconnects while reducing device warpage.

A semiconductor device design varies gate electrode density across distinct regions to manage current flow and thermal distribution.

A stress relaxation layer accommodates thermal expansion changes in through silicon vias, reducing thermally induced stress and minimizing crack risks.

A heat dissipation member transfers thermal energy from a lower semiconductor chip to an upper package substrate via an interconnection unit.

A transfer support featuring platforms and through holes attracts micro-LED chips via vacuum pressure.

Boundary features containing bond wires define a perimeter on the die attach pad to contain conductive material and increase bond line thickness.

Segmented conductive leads dissipate heat and carry high current, resolving thermal management limits in bond wire packages.

Bond enhancing agents enable indium bonding to non-metallic semiconductor dies without backside metallization, reducing manufacturing complexity.

A graphene layer inserted between the lower electrode and phase change material enables efficient thermal conduction to reduce driving current.

Sputtered metal layers extend from chip terminals across polymeric frames to embedded fiducials, eliminating electroless plating complexity.

A reduced temperature CVD process deposits void-free tungsten in high aspect ratio features while suppressing fluorine migration into underlying layers.

Bismuth-rich solder prevents full copper consumption during assembly by minimizing tin reactions, ensuring reliable electrical connections.

Irradiating bonding surfaces with silicon particles activates interfaces for low-temperature joining of ionic crystals without thermal damage.

Copper insertion layers form stable Cu6Sn5 and Cu3Sn intermetallic compounds that reduce void formation in solder joints during thermal cycling.

Direct pad-to-pad coupling removes solder bumps to reduce package thickness and resolve pitch mismatch issues.

Through vias route electrostatic discharge protection to a bottom chip, reducing surface area consumption across the stack.

A dummy terminal equalizes etching loading effects to prevent outermost terminal conduction failures from moisture exposure.

Segmented lead blocks connected via fuse interconnects eliminate crossing interference, enabling higher connectivity within smaller form factors.

An electrode layer extends over a passivation film opening to distribute stress and prevent cracking during wire bonding.

Electrochemical dissolution selectively removes the conductive seed layer to resolve integration deterioration and prevent cracks at 10 μm/10 μm line widths.

Ion implantation creates a growth stop film to suppress aluminum movement and prevent hillock formation during annealing without increasing wiring resistance.

Partial wafer dicing and polymer filling create self-aligned back-side conductive layers, eliminating costly lithographic alignment steps.

Vertical power TSVs reduce resistance in stacked chips, maintaining stable power distribution across multiple layers.

Vertical stacking of device substrates reduces printed circuit board area while eliminating complex through-silicon vias.

Direct chip mounting on a semi-cured insulation layer eliminates thermal expansion warping and flux-induced insulation failures in semiconductor packages.

A semiconductor package uses vertical stacking and backside heat dissipation members to manage thermal energy from high-power chips.

An explosion protection means embedded around bonding wires delays vaporization and reduces pressure wave strength, preventing environmental contamination.

Stacked integrated components in an ophthalmic lens resolve wireless power supply limits by embedding a lithium ion battery and photoelectric device.

Segmenting positioning and curing stages suppresses voids in the adhesive layer, ensuring high-reliability semiconductor device assembly.

Dual thermal vias in the substrate dissipate heat from optical functional elements and window lids, preventing performance degradation at high brightness.

Forming redistribution lines before molding prevents stress-induced shifts, enabling fine-line alignment during flip-chip bonding.

Inorganic outer rim on die bonding pad blocks epoxy resin flow-out, stabilizing semiconductor characteristics and high-frequency noise shielding.

A stepped diffusion barrier prevents intermetallic compound formation between copper pillars and solder, enabling thermal stability across -40°C to 150°C.

Composite housing with spring pressing mechanism dissipates heat from electronic cards while reducing weight and maintenance costs.

Partially embedding diamond or ceramic particles in metal substrates resolves heat removal versus electrical insulation trade-offs.

Segmenting linear chains using D4, D5, and D6 monomers resolves the contradiction between precise structural control and manufacturing ease.

Fe-Co-Ni under barrier metal suppresses intermetallic compounds at Cu-Sn interfaces, maintaining connection reliability during circuit miniaturization.

Redistribution layer connects conductive via to bond pad, resolving yield loss from wide saw streets in package-in-package devices.

Angled linear portions of the common source plate reduce electrical current requirements, enabling higher resistivity materials and 8F2 cell density.

An overhanging capping layer protects metal lines from via misalignment, reducing chip area and processing complexity.

A non-conductive boundary structure separates conductive pads in semiconductor devices to enable tighter integration.

Tiered leads connect bottom and top component assemblies to reduce wire lengths while increasing circuitry density.

A semiconductor module integrates a heat dissipation member with a sealing member to dissipate heat from the element.