Transfer Support With Through Holes For Micro-LED Chip Handling
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Solution Overview
Problem
The challenge in manufacturing monolithic micro-displays lies in efficiently transferring light emitting diode (LED) chips with different colored emissions to a circuit substrate, as their varying lattice constants complicate growth on a single substrate and conventional color conversion techniques suffer from low efficiency and uniformity issues.
Innovation Solution
A transfer support and module that utilizes a vacuum apparatus with a transfer support featuring platforms, supporting pillars, and through holes to rapidly and efficiently attract and transfer micro-LED chips to a target substrate, enhancing epitaxial quality and display brightness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional color conversion materials are used with light emitting diode chips, then different colored lights can be emitted, but conversion efficiency and coating uniformity are low
Solution Approach 1:
The patent extracts the color conversion materials from the conventional approach and replaces them with directly epitaxially grown light emitting layers on the semiconductor substrate. Each light emitting layer is doped with different materials (e.g., InGaN with different In compositions) to emit different colors directly, eliminating the need for separate color conversion materials and their associated conversion losses.
Solution Approach 2:
The patent performs preliminary doping of the light emitting layers during the epitaxial growth process itself, before the chips are fabricated and assembled. By incorporating different dopant concentrations and compositions into each light emitting layer during growth, the desired color emission properties are established in advance, avoiding subsequent color conversion steps.
2Adaptability or versatility
If light emitting diode chips with different colored emissions are grown on a single substrate, then color variety is achieved, but lattice constant differences make growth difficult
Solution Approach 1:
The patent applies local quality by creating different light emitting layers with specific compositional gradients and doping profiles at different locations or depths within the semiconductor structure. Each layer is optimized locally for its specific color emission requirement while maintaining overall crystal structure integrity through careful control of lattice matching conditions during epitaxial growth.
3Illumination intensity
If transfer-bonding technique is used to transfer light emitting diode chips to circuit substrate, then epitaxial quality and brightness are enhanced, but transfer speed and efficiency are insufficient
Solution Approach 1:
The patent merges the light emitting layer growth process with the chip formation and transfer preparation processes. By epitaxially growing the light emitting layers directly on the semiconductor substrate and integrating the transfer structure design into the same manufacturing flow, the patent achieves both high epitaxial quality and efficient transfer capability without requiring separate slow transfer steps.
Solution Approach 2:
The patent replaces conventional mechanical transfer-bonding methods with a vacuum-based attraction system. The semiconductor substrate is placed in a vacuum chamber where vacuum attraction forces enable rapid, contactless transfer of the chips to the circuit substrate, eliminating the need for slow mechanical bonding operations while preserving epitaxial quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables rapid and efficient transfer of micro-LED chips, improving the brightness and display quality of monolithic micro-displays by addressing the challenges of lattice constant differences and color conversion efficiency.
Implementation Method 1
the transfer support is disposed on the vacuum apparatus so that the exhausting vent communicates with a plurality of through holes, and thus attracting the plurality of elements to the platforms via the plurality of through holes
Data Source
AI summary
A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.