3D Semiconductor Gate Structure With Gradient Hydrogen Passivation
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Solution Overview
Problem
The integration and operational reliability of three-dimensional semiconductor devices are limited by defects in the gate and channel structures, necessitating improved passivation methods to enhance performance and reduce energy consumption.
Innovation Solution
Incorporation of hydrogen supply layers with oxygen vacancies and hydrogen blocking layers to efficiently supply and control hydrogen distribution, passivating defects in the gate, channel, and electrode structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single hydrogen supply layer is used, then the manufacturing process is simple, but hydrogen distribution is insufficient and device reliability is limited
Solution Approach 1:
The hydrogen supply layer is segmented into multiple layers with different hydrogen concentrations. The first hydrogen supply layer has a first hydrogen concentration, the second hydrogen supply layer has a second hydrogen concentration higher than the first, and the third hydrogen supply layer has a third hydrogen concentration higher than the second. This segmentation enables gradient hydrogen supply to effectively passivate defects at different depths of the semiconductor device, thereby improving device reliability without excessive complexity
Solution Approach 2:
Different regions of the hydrogen supply structure are assigned different hydrogen concentrations based on local requirements. The hydrogen concentration increases from the first to the third hydrogen supply layer, creating a gradient that matches the defect distribution depth. This local quality approach ensures optimal hydrogen passivation at each depth while maintaining manufacturing feasibility
2Reliability
If hydrogen concentration is increased to improve passivation, then defect reduction is enhanced, but hydrogen diffusion into interlayer dielectric layers increases causing reliability issues
Solution Approach 1:
The hydrogen concentration parameter is changed across different layers of the hydrogen supply structure. The first hydrogen supply layer has a lower hydrogen concentration, while the second and third hydrogen supply layers have progressively higher concentrations. This parameter change enables effective defect passivation at deeper regions without causing excessive hydrogen diffusion into the interlayer dielectric layer, as the gradient distribution controls hydrogen flow
Solution Approach 2:
The hydrogen blocking layer acts as an intermediary between the hydrogen supply layers and the interlayer dielectric layer. It has a hydrogen concentration lower than the first hydrogen supply layer and is positioned to prevent hydrogen from diffusing into the dielectric while still allowing the gradient hydrogen supply to function effectively for defect passivation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure and manufacturing method improve the stability and reliability of semiconductor devices by effectively passivating defects, enhancing cell current and distribution, thereby improving overall device performance.
Implementation Method 1
a first hydrogen supply layer disposed on the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy
Implementation Method 2
a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration
Implementation Method 3
annealing the hydrogen blocking layer and the first hydrogen supply layer
Data Source
AI summary
A semiconductor device may include a gate structure, a channel structure extending through the gate structure, a first hydrogen supply layer disposed on the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy, and a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.