Semiconductor Gate Oxide Layer Blocks Impurity Diffusion
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Solution Overview
Problem
In downscaled semiconductor devices, the replacement metal gate process requires multiple etching, depositing, and polishing steps, which can lead to impurity diffusion through physical diffusion paths between barrier layers, affecting device reliability and performance.
Innovation Solution
A semiconductor device configuration is introduced, where an oxide layer is formed between barrier layers to block physical diffusion paths, using an amorphous oxide layer, such as TiO2, to prevent impurity diffusion, and the barrier layers are made of conductive materials like titanium (Ti), ensuring effective adhesion and reducing additional processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple etching, depositing and polishing steps are used in the replacement metal gate process for downscaled semiconductor devices, then the integration density is improved, but impurity diffusion occurs through physical diffusion paths between barrier layers
Solution Approach 1:
An oxide layer is introduced as an intermediary barrier between the first and second barrier layers. This oxide layer specifically blocks physical diffusion paths that would otherwise allow impurity diffusion between the barrier layers during multiple processing steps, thereby maintaining reliability while enabling high integration density.
Solution Approach 2:
The gate structure employs a composite multi-layer configuration comprising a gate insulation layer, first barrier layer, oxide layer, second barrier layer, and gate electrode. This composite structure combines materials with different properties to simultaneously achieve low specific resistance through the conductive barrier layers and impurity diffusion prevention through the oxide layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively blocks impurity diffusion, enhancing the reliability and performance of semiconductor devices by preventing fluorine ion penetration and maintaining low specific resistance without increasing wire resistance.
Implementation Method 1
an oxide layer between barrier layers to prevent impurities from being diffused through the physical diffusion path between the barrier layers
Data Source
AI summary
Provided are a semiconductor device configured to block a physical diffusion path by forming an oxide layer between barrier layers to prevent impurities from being diffused through the physical diffusion path between the barrier layers, and a method for fabricating the semiconductor device. The semiconductor device includes a gate insulation layer formed on a substrate, a first barrier layer formed on the gate insulation layer, an oxide layer formed on the first barrier layer, the oxide layer including an oxide formed by oxidizing a material included in the first barrier layer, a second barrier layer formed on the oxide layer, a gate electrode formed on the second barrier layer, and source/drains disposed at opposite sides of the gate electrode in the substrate.