Semiconductor Gate Structure With Protective Layer Against Leakage
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Solution Overview
Problem
As semiconductor devices become more complex and densely integrated, they face challenges with reliability due to increased coupling between elements, leading to decreased operating speeds and reliability.
Innovation Solution
The semiconductor device incorporates a protective layer between the gate structure and the source/drain patterns, comprising a protective insulating layer and a protective liner, which reduces leakage current and improves reliability by maintaining the integrity of the field insulating layers during manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If semiconductor devices are integrated at higher densities with more complex structures, then more functions and higher speed are achieved, but coupling between elements increases causing decreased reliability
Solution Approach 1:
A protective layer comprising a protective insulating layer and a protective liner is introduced as an intermediary structure between the gate electrode and the field insulating layer. This protective layer acts as a mediator that prevents direct coupling and harmful interactions between adjacent elements, thereby maintaining reliability while allowing high-density integration and complex device structures.
2Productivity
If transistor sizes are decreased to increase integration density, then more elements are integrated, but coupling between elements occurs reducing reliability and operating speed
Solution Approach 1:
The protective layer is segmented into two distinct functional components: a protective insulating layer and a protective liner. This segmentation allows each layer to perform its specific function - the insulating layer provides electrical isolation while the liner provides physical protection - enabling effective coupling prevention in high-density integrated structures without compromising reliability.
3Length of moving object
If field insulating layers are made thinner to reduce device size, then device dimensions are reduced, but the insulating layers become more vulnerable to damage during manufacturing
Solution Approach 1:
The protective liner is applied beforehand to cover and protect the field insulating layer before subsequent manufacturing processes. This prior cushioning prevents mechanical damage and contamination to the thin insulating layer during fabrication, maintaining its structural integrity even when the layer is made thinner to reduce overall device dimensions.
4Reliability
If a protective layer is added between gate structure and source/drain patterns, then leakage current is reduced and reliability is improved, but device structure becomes more complex
Solution Approach 1:
The protective layer structure serves multiple functions simultaneously: the protective insulating layer provides electrical isolation to reduce leakage current, while the protective liner provides physical protection during manufacturing. This multi-functionality allows the structure to achieve reliability improvement without proportionally increasing complexity, as a single integrated protective layer system accomplishes what would otherwise require multiple separate structures.
Data Source
AI summary
A semiconductor device comprising: a substrate; a first lower pattern on the substrate; a second lower pattern on the first lower pattern; channel patterns on the second lower pattern; a first field insulating layer on a first side surface of the first lower pattern; a second field insulating layer on a second side surface of the first lower pattern; a buried insulating structure on the first field insulating layer and on side surfaces of the channel patterns; a protective layer on the second field insulating layer; source/drain patterns on sides of each of the channel patterns; and a gate electrode extending around the channel patterns and the buried insulating structure, wherein the protective layer comprises: a protective insulating layer between the first lower pattern and the second lower pattern, and between the gate electrode and the second field insulating layer; and a protective liner extending around the protective insulating layer.