Semiconductor Gate Stack with Non-Uniform Interlayer Insulating Layers
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Solution Overview
Problem
Three-dimensional non-volatile memory devices face challenges in improving operation reliability and integration density due to limitations in the stacking of memory cells, leading to inefficiencies in programming and reading operations.
Innovation Solution
A semiconductor device design featuring a gate stack with alternately stacked interlayer insulating layers and word line layers, including conductive layers, charge trap layers, and tunnel insulating layers, where the thickness of the first interlayer insulating layers is greater than that of the second interlayer insulating layers, enhancing memory cell integration and reducing interference between adjacent cells by applying distinct programming and read voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are stacked vertically to improve integration density, then integration density is improved, but operation reliability deteriorates due to increased interference between adjacent cells
Solution Approach 1:
The gate stack is segmented into multiple word line stack layers (first, second, third word line stack layers) separated by interlayer insulating layers. This segmentation isolates adjacent memory cells vertically, reducing interference between them while maintaining high integration density through the stacked configuration.
Solution Approach 2:
Interlayer insulating layers are introduced as intermediary structures between adjacent word line stack layers. These insulating layers act as mediators that electrically isolate adjacent memory cells, preventing charge leakage and interference while allowing the vertical stacking architecture to achieve high integration density.
2Ease of manufacture
If uniform thickness interlayer insulating layers are used to simplify manufacturing, then ease of manufacture is improved, but operation reliability deteriorates due to insufficient isolation between memory cells
Solution Approach 1:
The interlayer insulating layers are designed with non-uniform thickness, where the first interlayer insulating layer has a greater thickness than the second interlayer insulating layer. This local variation in thickness provides enhanced electrical isolation in critical regions while maintaining manufacturability through controlled deposition processes.
Solution Approach 2:
The thickness parameter of the interlayer insulating layers is varied to optimize performance. By changing the thickness parameter from uniform to non-uniform (first layer thicker than second layer), the patent achieves better electrical isolation and operation reliability while still maintaining ease of manufacture through standard semiconductor fabrication techniques.
3Measurement precision
If higher pass voltages are applied during read operations to improve signal detection, then measurement precision is improved, but operation reliability deteriorates due to increased disturb phenomenon in adjacent cells
Solution Approach 1:
The segmented gate stack structure with multiple word line stack layers separated by interlayer insulating layers enables independent voltage control of adjacent memory cells. This segmentation allows precise signal detection in the selected cell while applying lower pass voltages to adjacent cells, preventing disturb phenomenon and maintaining data stability.
Solution Approach 2:
Different pass voltages are applied to different regions (selected cell vs. adjacent cells) based on their functional requirements. The selected memory cell receives higher read voltage for precise signal detection, while adjacent cells receive lower pass voltages to minimize disturbance, achieving both measurement precision and operation reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves memory cell integration density and reduces the disturb phenomenon by applying lower pass voltages to adjacent memory cells, thereby enhancing data stability and operational reliability.
Implementation Method 1
forming blocking insulating layers by oxidizing a sidewall of the second material layers exposed through the recess regions
Data Source
AI summary
The present technology relates to a semiconductor device, a method of manufacturing the same, and a method of operating the same. The semiconductor device includes a gate stack including first interlayer insulating layers and word line stack layers alternately stacked, a vertical channel structure extending in a vertical direction in the gate stack, and memory structures interposed between the word line stack layers and the vertical channel structure, each of the word line stack layers includes an even conductive layer, a second interlayer insulating layer, and an odd conductive layer sequentially stacked, and a thickness of any one of the first interlayer insulating layers is greater than a thickness of any one of the second interlayer insulating layers.