3D Semiconductor Gate Stacked Structures with Support Insulating Layer
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Solution Overview
Problem
Three-dimensional semiconductor devices face structural distortion issues during manufacturing due to the stacking of interlayer insulating layers and conductive patterns, which affects their integration and stability.
Innovation Solution
The semiconductor device incorporates gate stacked structures with a common source line having uneven sidewalls and a support insulating layer filling concave portions between the gate stacked structures, along with a manufacturing method involving alternating material layers, slits, and sacrificial material removal to enhance structural stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the height of the stacked structure is increased to improve integration degree, then the integration degree is improved, but structural distortion such as bending of the stacked structure occurs
Solution Approach 1:
The stacked structure is divided into multiple segments by forming slits that extend in the first direction, creating separated regions that can be independently supported. This segmentation prevents the entire stacked structure from bending as a single unit, thereby maintaining structural stability while allowing increased height for higher integration.
Solution Approach 2:
The patent employs composite material layers including first material layers, second material layers with different etch rates, sacrificial material layers, and support structures. These composite layers work together to provide mechanical support and prevent bending of the stacked structure, enabling increased height without compromising structural stability.
2Productivity
If the stacked structure is divided into multiple gate stacked structures by forming slits, then the integration degree is improved, but the manufacturing process complexity increases
Solution Approach 1:
The slits are formed and support structures are prepared in advance before the final gate electrode formation. This preliminary action allows the stacked structure to be pre-segmented and supported, simplifying subsequent manufacturing steps while achieving high integration through the divided gate stacked structures.
Solution Approach 2:
Sacrificial material layers are used as intermediaries during the manufacturing process. These temporary structures facilitate the formation of slits and support regions, and are later removed to create the final divided gate structure. This intermediary approach simplifies the overall manufacturing process by breaking it into manageable stages.
Data Source
AI summary
A semiconductor device includes gate stacked structures surrounding channel layers, a common source line filling a separation area between the gate stacked structures adjacent to each other and having an upper surface including first concave portions, and a support insulating layer filling the first concave portions and having sidewalls facing portions of the channel layers.