Semiconductor Device Surge Resistance via Gate Protection
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Solution Overview
Problem
Bidirectional switches with compound semiconductors face a trade-off between reducing element size and improving surge resistance, particularly between gate electrodes, with existing surge protection methods not effectively enhancing resistance between gate electrodes while maintaining resistance between gate and ohmic electrodes.
Innovation Solution
The semiconductor device incorporates a bidirectional switch element with first and second protection elements, each comprising compound semiconductor layers and gate electrodes, which function to reduce surge voltages between gate electrodes by capacitive coupling and electric connections, ensuring improved surge resistance through specific voltage withstand configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the element size is reduced using compound semiconductors, then the ON-resistance is reduced and power loss is decreased, but the resistance to surges between gate electrodes deteriorates
Solution Approach 1:
The protection circuit is divided into multiple independent unidirectional switches, each protecting against surges in one direction between gate electrodes. This segmentation allows the bidirectional switch to maintain small size while the distributed protection structure handles surge currents effectively.
Solution Approach 2:
Unidirectional switch protection elements are introduced as intermediary components between the gate electrodes of the bidirectional switch. These intermediary elements provide a controlled path for surge currents, protecting the main switch without requiring it to be larger.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces positive and negative surge voltages between gate electrodes, enhancing the semiconductor device's surge resistance without impacting normal switching operations, and allows for smaller element sizes with reduced parasitic capacitance.
Implementation Method 1
The first gate electrode and the second gate electrode form one of Schottky junction and p-n junction with the first compound semiconductor layer
Implementation Method 2
The first gate electrode and the second gate electrode form one of Schottky junction and p-n junction with the first compound semiconductor layer
Implementation Method 3
which function to reduce surge voltages between gate electrodes by capacitive coupling and electric connections
Data Source
AI summary
A semiconductor device includes: a first bidirectional switch element including a first gate electrode, a second gate electrode, a first electrode, and a second electrode; a first field-effect transistor including a third gate electrode, a third electrode, and a fourth electrode; and a second field-effect transistor including a fourth gate electrode, a fifth electrode, and a sixth electrode. The first electrode is electrically connected to the third gate electrode, the first gate electrode is electrically connected to the third electrode, the second electrode is electrically connected to the fourth gate electrode, the second gate electrode is electrically connected to the fifth electrode, and the fourth electrode is electrically connected to the sixth electrode.