Semiconductor Device Gate Voltage Control for Motor Short-Circuit Protection

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Solution Overview

Problem

Semiconductor devices used in motor control face issues with abrupt temperature increases and potential thermal destruction due to short-circuit failures, as existing overcurrent limiting circuits allow currents higher than rush currents to flow, leading to overheating and potential burnout.

Innovation Solution

A semiconductor device with a driver circuit that includes a booster circuit and a timer circuit, which activates a gate voltage reduction mechanism after a certain time, reducing the current-carrying capability of the power semiconductor element to prevent excessive current flow during short-circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the overcurrent limit value is set larger than the peak value of the rush current to allow normal motor operation, then the motor can start and operate normally, but the power semiconductor element will be thermally destroyed when a short-circuit failure occurs

Engineering Contradiction:
Improvemotor operationVSAvoidpower semiconductor element safety
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The gate voltage is dynamically adjusted in two stages: initially set to a first voltage level to allow rush current during motor startup, then reduced to a second voltage level after a predetermined time period. This dynamic adjustment enables the system to accommodate normal operation requirements while preventing catastrophic failure during short-circuit conditions.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The timer circuit预先 (in advance) determines when to reduce the gate voltage based on elapsed time since power supply activation. By pre-setting a predetermined time period, the system proactively reduces current-carrying capability before a short-circuit can cause thermal destruction, rather than waiting for temperature sensors to detect overheating.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the gate voltage is reduced early to prevent short-circuit damage, then the power semiconductor element is protected, but the motor cannot start properly due to insufficient rush current

Engineering Contradiction:
Improvepower semiconductor element safetyVSAvoidmotor startup
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The gate voltage is dynamically adjusted in two stages: initially set to a first voltage level to allow rush current during motor startup, then reduced to a second voltage level after a predetermined time period. This dynamic adjustment enables the system to accommodate normal operation requirements while preventing catastrophic failure during short-circuit conditions.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The gate voltage reduction is implemented as a time-based periodic action where the voltage level changes after a predetermined time period has elapsed since power supply activation. This timing-based approach ensures the motor receives adequate rush current during startup while automatically limiting current after the startup phase.

Inventive Principle:
Principle #19Periodic action

3Ease of operation

If the protection circuit waits to detect overheat state before activating protection, then normal operation is maintained, but the temperature rises to thermal destruction level before protection activates

Engineering Contradiction:
Improvenormal operationVSAvoidpower semiconductor element temperature
Core Design Contradiction:
Ease of operationVSTemperature

Solution Approach 1:

The timer circuit预先 (in advance) determines when to reduce the gate voltage based on elapsed time since power supply activation. By pre-setting a predetermined time period, the system proactively reduces current-carrying capability before a short-circuit can cause thermal destruction, rather than waiting for temperature sensors to detect overheating.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The gate voltage reduction circuit applies a preliminary counter-action by reducing the gate voltage to limit current flow before thermal destruction can occur. This preventive measure opposes the harmful effect of excessive current by actively reducing the driving voltage to the power semiconductor element.

Inventive Principle:
Principle #9Preliminary anti-action

Data Source

PatentEP3104527B1Semiconductor device
Publication Date: 2021.03.03 FUJI ELECTRIC CO LTD
  • EP3104527B1 patent drawingFigure 1
  • EP3104527B1 patent drawingFigure 2
  • EP3104527B1 patent drawingFigure 3

AI summary

When activating a motor, a gate voltage with which a power semiconductor element (11) may supply a rush current of the motor (2) is generated by a charge pump circuit (12), when a certain time (time until the rush current ends) has elapsed after activating the motor (2), a timer circuit (16) operates a gate clamp circuit (17), which reduces the gate voltage of the power semiconductor element (11) to reduce the current-carrying capability of the power semiconductor element (11). Subsequently, when the motor has caused a short-circuit failure, the power semiconductor element (11), because its gate voltage is reduced by the gate clamp circuit (17) in advance, supplies only a load short current corresponding to the reduced gate voltage. Accordingly, the heat generation due to the short-circuit current is also small and an increase in temperature is also suppressed.