Semiconductor Device With Gradient Impurity Profiles For Breakdown Voltage Control
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Solution Overview
Problem
Existing semiconductor devices with multiple breakdown voltage levels face challenges in maintaining uniform substrate breakdown voltage across different DMOS regions, leading to potential failures in ensuring necessary breakdown voltages, especially in applications like motor drivers and audio amplifiers.
Innovation Solution
The semiconductor device incorporates DMOS regions with varying distances and impurity concentrations to control source-drain breakdown voltage, while maintaining uniform substrate breakdown voltage by adjusting the dimensions and impurity distribution, thereby optimizing chip size and manufacturing cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple DMOS regions with different breakdown voltage levels are incorporated on one chip, then chip size is optimized and versatility is improved, but substrate breakdown voltage uniformity deteriorates
Solution Approach 1:
The patent applies local quality by creating different impurity concentration profiles in specific regions. The gradient-type impurity concentration distribution is implemented locally in the substrate beneath DMOS regions, allowing each region to have optimized electrical characteristics for its specific breakdown voltage requirement while maintaining overall substrate integrity and uniform breakdown voltage across the entire chip.
2Reliability
If punch through voltage to substrate is increased to ensure breakdown voltage, then reliability is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent changes the impurity concentration parameter in the substrate to achieve the desired breakdown voltage characteristics. By using a gradient-type impurity concentration distribution where the impurity concentration gradually changes from the surface toward the deeper regions, the patent achieves both high breakdown voltage and uniform substrate characteristics without requiring complex trench structures or insulating material burial processes.
Data Source
AI summary
A semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.