Semiconductor Structure Growth for Compact Full-Color LED Pixels
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Solution Overview
Problem
Existing full-color LED packaging units and dot-matrix LED displays are relatively large in size, limiting the development of high-definition displays with smaller-sized light emitting pixels.
Innovation Solution
A method of manufacturing a semiconductor structure involving a substrate with unit regions and patterned masks, where each unit region has sub-unit regions with varying hole ratios and different opening areas, allowing for the growth of semiconductor layers with distinct doping rates and wavelengths, thereby forming smaller and more efficient LED units.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If three separate LED chips are packaged on a PCB through die bond and wire bond process, then full-color LED packaging unit can be formed, but the size of the packaging unit becomes relatively large (1 mm*1 mm)
Solution Approach 1:
The patent merges three separate LED chip packaging processes into a single integrated growth process. Multiple sub-unit regions (corresponding to red, green, and blue sub-pixels) are formed on one substrate simultaneously through selective area growth, eliminating the need for separate die bonding and wire bonding of three chips. This integration directly reduces the packaging unit size from 1 mm*1 mm to a much smaller area while maintaining full-color capability.
Solution Approach 2:
The patent segments the substrate into multiple unit regions, each containing n number of sub-unit regions with different hole ratios. Each sub-unit region corresponds to a specific color sub-pixel. This segmentation allows independent optimization of each sub-pixel while maintaining compact integration, contributing to the reduced overall size of the packaging unit.
2Ease of manufacture
If COB packaging process is used to form dot matrix LED display, then display can be formed, but the size of the display becomes relatively large
Solution Approach 1:
The patent combines multiple LED units into a single integrated structure on one substrate. By forming multiple sub-unit regions with different hole ratios that correspond to different color sub-pixels, the invention creates a compact full-color LED unit that replaces traditional COB packaging, thereby reducing the overall display size while maintaining manufacturability.
Solution Approach 2:
The patent applies local quality by assigning different hole ratios to different sub-unit regions based on their required color characteristics. Each sub-unit region has optimized opening areas that control the composition and light-emitting characteristics of the semiconductor layers grown in that region. This local optimization enables compact integration of multiple color sub-pixels within a small area.
3Ease of manufacture
If uniform opening areas are used in patterned mask, then manufacturing process is simplified, but cannot achieve varied light emitting wavelengths for different sub-pixels
Solution Approach 1:
The patent implements local quality by assigning different hole ratios (opening areas) to different sub-unit regions corresponding to different color sub-pixels. The patterned mask has openings with areas specifically designed for each sub-pixel type (red, green, blue), allowing control over the composition and light-emitting wavelength of the semiconductor layers grown in each region. This enables varied light emitting wavelengths while maintaining a relatively simple single-step growth process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the production of smaller full-color LED packaging units with varied light emitting wavelengths, reducing the size and cost of full-color LED displays while maintaining high definition and image quality.
Implementation Method 1
growing a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence above the substrate exposed by the respective openings
Data Source
AI summary
The present application provides a method of manufacturing a semiconductor structure. Due to different hole ratios of openings of a mask corresponding to one unit region of a substrate, flow rates of reactive gas in openings are different when growing a light emitting layer. In this way, growth rates of the light emitting layers in openings are different, and doping efficiencies of the light emitting layers in openings are different, such that composition proportions of respective elements in the grown light emitting layer are different, and the light emitting wavelengths of LEDs are different.