Semiconductor Structure Heat-Conducting Layer Thermal Management
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Solution Overview
Problem
Semiconductor structures formed using SOI substrates face challenges with heat transfer after removing the bottom semiconductor layer, leading to increased internal temperature and degraded electrical properties due to lower thermal conductivity of air compared to silicon, resulting in reduced saturation current and performance.
Innovation Solution
Incorporating a first heat-conducting layer with higher thermal conductivity than the isolation structures, and a second heat-conducting layer on the bottom surface, along with a through hole and bottom layer conductive via to enhance heat transfer, utilizing materials like polysilicon and amorphous silicon for improved thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the bottom semiconductor layer is removed from the SOI substrate, then the device integration and electrical isolation are improved, but the heat transfer capability deteriorates due to lower thermal conductivity of air compared to silicon
Solution Approach 1:
The patent introduces a heat-conducting layer as an intermediary component between the top semiconductor layer and the support substrate. This layer has higher thermal conductivity than both the isolation structures and air, serving as a thermal bridge to conduct heat away from the semiconductor devices effectively, thus resolving the contradiction between electrical isolation and heat transfer capability
Solution Approach 2:
The patent changes the thermal conductivity parameter by selecting materials for the heat-conducting layer that have higher thermal conductivity than the isolation structures. This parameter change ensures efficient heat transfer while maintaining the electrical isolation provided by the removed bottom semiconductor layer
2Temperature
If heat dissipation is improved through better thermal conductivity materials, then the internal temperature is reduced, but the device complexity increases due to additional layers and structures
Solution Approach 1:
The heat-conducting layer is designed to serve multiple functions: it provides thermal conduction to dissipate heat, acts as a structural support layer, and can be integrated with existing device fabrication processes. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity while achieving improved heat dissipation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases heat transfer rates, reduces internal temperature, and enhances electrical properties by facilitating faster heat dissipation, thereby improving the semiconductor structure's performance and reducing self-heating effects.
Implementation Method 1
a first heat-conducting layer having a thermal conductivity higher than a thermal conductivity of the isolation structures and passing through the insulation material layer, the isolation structure in the top semiconductor layer, and the first dielectric layer
Data Source
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AI summary
The present invention provides semiconductor structures and fabrication methods thereof. An exemplary semiconductor structure includes an insulation material layer having a top semiconductor layer having transistor regions formed on a top surface of the insulation material layer; isolation structures formed in the top semiconductor layer between adjacent transistor regions; a first dielectric layer formed over the top semiconductor layer; a first heat-conducting layer having a thermal conductivity higher than a thermal conductivity of the isolation structure and passing through the insulation material layer, the top semiconductor layer and the first dielectric layer; a second dielectric layer formed over the first dielectric layer; an interconnect structure formed in the second dielectric layer; and a bottom layer conductive via passing through the heat-conducting layer and a partial thickness of the second dielectric layer, and electrically connected with the interconnect structure.