Semiconductor Heat Dissipation Structure With Segmented Thermal Interface
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Solution Overview
Problem
Conventional heat dissipation structures for thin package semiconductor devices face challenges in maintaining both effective heat dissipation and insulation reliability, often resulting in electrical breakdown due to reduced insulation distance and low thermal conductivity, which increases device costs.
Innovation Solution
A heat dissipation structure that incorporates a high-heat-transferring conductive member with a recess part near the semiconductor device's periphery, contacted by a non-insulating member for heat transfer and an insulating member for heat diffusion, while using conductive and insulating fixing materials to ensure electrical stability and accurate positioning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conductive thermal interface material is used to connect the semiconductor device to the heat sink, then heat dissipation efficiency is improved, but insulation reliability deteriorates due to reduced insulation distance and electrical breakdown risk
Solution Approach 1:
The thermal interface material is segmented into a first region (under the semiconductor device) with higher thermal conductivity for efficient heat transfer, and a second region (peripheral region) with lower thermal conductivity or insulating properties to maintain insulation reliability and prevent electrical breakdown
Solution Approach 2:
Different regions of the thermal interface material are assigned different thermal conductivity values tailored to their specific functions: the central region requires high thermal conductivity for heat dissipation, while the peripheral region requires insulating properties to maintain electrical isolation
2Reliability
If an insulating thermal interface material is used to maintain insulation distance, then insulation reliability is improved, but heat dissipation efficiency deteriorates due to low thermal conductivity
Solution Approach 1:
The thermal interface material is divided into functional regions: a first region with high thermal conductivity material for efficient heat transfer from the semiconductor device, and a second peripheral region with insulating material to maintain adequate insulation distance and prevent electrical breakdown
Solution Approach 2:
The thermal interface material exhibits spatially varying thermal conductivity properties, with the central area optimized for heat conduction and the peripheral area optimized for electrical insulation, allowing simultaneous achievement of both heat dissipation and insulation reliability
3Speed
If the package is thinned to reduce parasitic inductance, then switching speed is improved, but insulation distance is reduced leading to electrical breakdown risk
Solution Approach 1:
The thermal interface material is segmented into a first region under the semiconductor device with high thermal conductivity for heat dissipation, and a second peripheral region with insulating properties that extends the effective insulation distance even in thinned packages, preventing electrical breakdown while maintaining high switching speed
Solution Approach 2:
The solution addresses the two-dimensional constraint of thinned packages by introducing a spatially differentiated thermal conductivity profile in the thermal interface material, creating functional zones that resolve the conflict between reduced package thickness and maintained insulation reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves efficient heat dissipation and reliable insulation, reducing the risk of electrical breakdown and overall costs by maintaining high thermal conductivity and insulation reliability.
Implementation Method 1
a non-insulating member contacting the heat dissipation surface of the semiconductor device and the high-heat-transferring conductive member
Implementation Method 2
an insulating member contacting the high-heat-transferring conductive member and the heat dissipation component
Data Source
Figure 1
Figure 2
Figure 3(a)~3(b)
AI summary
A heat dissipation structure (103) of a semiconductor device (10) is provided, the semiconductor device (10) including: an electrical bonding surface (11a) electrically connected to a substrate (20); and a heat dissipation surface (11b) as an opposite side of the electrical bonding surface (11a). The heat dissipation surface (11b) makes contact with a heat spreader (31) via a conductive TIM (33) while the heat spreader (31) makes contact with a heat sink (30) via an insulating TIM (43). A surface of the heat spreader (31) facing the semiconductor device (10) includes a recess part (31a) formed in at least one part in a vicinity of an outer periphery of the semiconductor device (10).