Frequency-Controlled Semiconductor Heating for Localized Thermal Gradients
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Solution Overview
Problem
Existing techniques for establishing or adjusting the temperature of semiconductor substrates lack efficiency and precision in controlling temperature gradients in time and space.
Innovation Solution
The use of a non-zero frequency time-varying electric field capacitively coupled to a semiconductor substrate, allowing for controlled heat generation and management of temperature gradients through adjustments in the frequency, amplitude, and impedance matching of the electric field.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a microwave cavity is used to heat a semiconductor wafer, then the semiconductor wafer can be heated, but the ability to localize heat production or gradients at particular locations within the substrate is lost
Solution Approach 1:
The patent divides the heating function into multiple independent heating zones by placing multiple heating elements at different locations on the substrate. Each heating element can be independently controlled to produce heat at specific locations, enabling localized heat production and temperature gradient control while maintaining overall substrate heating capability
Solution Approach 2:
The patent applies different heating conditions to different locations on the substrate by using multiple heating elements with independent control. This allows specific regions to have different temperature profiles and heat production rates, enabling precise spatial control of temperature gradients without requiring a cavity structure
2Temperature
If existing heating techniques are used, then heating can be achieved, but efficiency and precision in controlling temperature gradients in time and space are insufficient
Solution Approach 1:
The patent implements dynamic control of heating elements by independently adjusting the power, frequency, and timing of each heating element. This dynamic control capability enables precise temporal and spatial management of temperature gradients, allowing the system to adapt heating patterns in real-time to achieve desired thermal profiles with high efficiency
Solution Approach 2:
The patent controls temperature gradients by varying multiple parameters including heating element power levels, operating frequencies, and activation timing. By changing these parameters dynamically, the system achieves precise control over both the magnitude and distribution of temperature gradients while maintaining high heating efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and precise control of temperature gradients in semiconductor substrates, allowing for localized heat production and multi-mode control of thermal energy production.
Implementation Method 1
A non-zero frequency time-varying electric field can be capacitively applied (in an illustrative, non-limiting example), such as via local electrodes, to the semiconductor material
Implementation Method 2
The frequency can be adjusted, such as to a desired degree of excitation, such as to induce majority carriers in the semiconductor to oscillate to generate heat
Data Source
AI summary
A semiconductor or other substrate can include one or more electrodes, located directly or indirectly on the substrate, separated from each other and coupled to the substrate. At the two or more electrodes, non-zero frequency time-varying electrical energy can be received. The time-varying electrical energy can be coupled via the two or more electrodes to trigger a displacement current to activate free carriers confined within the semiconductor substrate to generate frequency-controlled heat in the semiconductor substrate.